2SC2120 0 Search Results

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

2SA950

Abstract: 2SC2120
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC2120Y

Abstract: 2SC2120 2SC2120-Y
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO:

2SC2120

Contextual Info: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o

2SC2120

Abstract: 2SC2120Y 2SC2120-Y 2SC2120-O 2sc212 2SC2120-0 2SA950 2SC2120O 2SC2120Y transistor 2sC2120 transistor
Contextual Info: 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary to 2SA950 G H J CLASSIFICATION OF hFE Product-Rank

2SC2120

Abstract: 2sC2120 y transistor transistor 2sc2120
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Plastic Encapsulate Transistors

Abstract: 2SC2120 2sc2120 equivalent
Contextual Info: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 1 2 Value Units VCBO Collector-Base Voltage

2SA950

Abstract: 2SC2120
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol

Contextual Info: 2SC2120 TOSHIBA TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 7sr ? 1 ? n Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE : hpg (i) = 100-320 1 Watts Amplifier Applications. Complementary to 2SA950 . 5.1 M AX. 0.45 0.55 M A X.

2SC2120

Abstract: 2sc2120 equivalent
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0.6 W（Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage V BR CBO : 35 V Operating and storage junction temperature range

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA950

Abstract: 2SC2120
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

2SD454

Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *

2SD650

Abstract: 2SD867 2SC1398 2SC1815 2SC2240 2SD797 2SD2061 2SD642 2s0867 2Sd428
Contextual Info: - 208 - £ Type No. m. tt « Manuf. 2SD 160 ✓ 2SD 161 SANYO 3tí S TOSHIBA 2SC783 m NEC Al HITACHI 2SD1138 *± il 2SD867 2SD797 2SD 165 f tf-y'rv •y-vírv ■y-yírv 2SÜ í68 ✓ s± 3 2SD867 2SD650 H 2S0 170A 2SC2120 2SD468 2SD 162 H ± il FUJITSU tó

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

2SC2222

Abstract: 2SC2093 2sc2103a 2SC2150 2SC2106 2SC2094 2SC2098 203d6 2SC2148 2sc2188
Contextual Info: - 116 - MXËfê su z rfi 3$ Ta=25tî, *EP(ÏTc=25^ m Vq e q VcEQ Ic(oc) Pc Pc* (V) (V) (A) (ïï) (W) 0. 5 10 (Ta=25tî) & (max) Vc e (V) 20 200 6 0.1 20 100 5 4 20 185 5 5 28 2SC2094 H # HF PA 40 3.5 30 2000 2SC2097 H * HF PA 50 15 150 5000 2SC2098 * 2

2SC1885

Abstract: 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 736a 2sd1047 Toshiba 2sc2565 2SD427 2SD525
Contextual Info: - € m & T y p e No. 2SD 725 * 2SD 726 * 2SD 727 * * 2SD 7 2 4 _ ^ ^ ^ •ft cn * * s Manuf. = a * SANYO 2SD823 TOSHIBA fi i tö T 2SD716 2SD 728 -V &' T 2SD718 2SD 729 fi 2SD 729H 2SD 730 2SD 730H 2SD 731 * 2SD 732 * 2SD 733 V = * MITSUBISHI □— A ROHM