2SC1926 Search Results

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A

2SC1275

Abstract: 2SC1926
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1926

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

2SC2037

Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Contextual Info: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

PA63H

Abstract: 2sc603 TRANSISTOR 2SC603 uPA15A PA54H PA60A UPA63H PA36A 2SC1733 UPA61A
Contextual Info: ü »II r, T ype No. Um ^PA 15A m m * n * *P A 33A + s ? '< , £ J 5 tt» 6 3 3 . /<PA34A + J7 » . If PA36A £ N P N Dual T ra n s la to r 4 > e -r> X S ;* (P - c h Dual M OS FET' (N -ch Dual M OS F E T ) f » 7 '< (N PN Dual T r a n s is to r ) « JM U E JM B

2SC1275

Abstract: 2SC1926
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC1918

Abstract: 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* Cob ºñ°í VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 150 8 5 1400* 1.2 175 80 14 55 650* 2.8 150 150 5 10 130*

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of