2SC178 Search Results

2sc1785

Contextual Info: Inchange Semiconductor Product Specification 2SC1785 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1785

Contextual Info: SavantIC Semiconductor Product Specification 2SC1785 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: 2SC1786 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)230è V(BR)CBO (V)230 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1783

Contextual Info: Inchange Semiconductor Product Specification 2SC1783 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High speed ,high current APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SA880

Abstract: 2SC1787
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 72C D | t,T3EflS4 □ ^ y V T S T-Zj-fsr * 2SA880 2SA880 '> i) PN P x \d$ 7 )\/~? \,— ^"12/ S i PNP Epitaxial Planar ./Ri/Xstiajfff'sliteffl/'AF Low Noise Amplifier 2SC1787 ij/C om plem entary Pair with 2SC1787 • ^ [/F e a tu r e s

2SC1783

Contextual Info: SavantIC Semiconductor Product Specification 2SC1783 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High speed ,high current APPLICATIONS ·For power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1787

Abstract: 2SA880 2SC1929
Contextual Info: ““ PANASONIC INDL/ELEK-CSEim h 7SC D | ^32654 DDmiDD 3 *_ _ 2SC1787 2SC1787 $"> yJ[/ 7 °ls — i ~ M / S i N P N Epitaxial Planar '> ij =i V N P N x Low-noise Amplifier *J /C o m p le m e n ta ry P air w ith 2SA880 2SA880

Contextual Info: 2SC1783 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120è V(BR)CBO (V)180 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC1789 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2sc1788

Contextual Info: Composite Transistors XN04503 XN4503 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1788 x 2 5˚ M Di ain sc te on na

2SA1512

Abstract: 2SC1788
Contextual Info: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage

2SC1788

Abstract: 2SA1512 transistor 2sa1512
Contextual Info: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage

2SA1512

Abstract: 2SC1788
Contextual Info: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm ● ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3421

Abstract: 2sd526 2SC46C 2SC4614 2SD467 2SC3423 2SC503 2sc2233 2sc2061 2SC2235
Contextual Info: m % Type No. * 2SC 477 * 2SC 478 * 2SC 481 ' * 2SC 483 * 2SC m / * 2SC 485 . * 2SC 4ÖÖ *- 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC * 2SC 2SC * * 489 490 491 / 492 493 X 494 z 1' 495 *' 436 - 1' 497 # 2SC 2SC * 2SC * 2SC 500 * 502 ^ 503 .r 504 Í * 505 *"•

2SC1222

Abstract: TO-92B 2SC1000 2SC1330 2SC923 2SC1328 2SC1327 2SC1213A 2SC1675 2SC858
Contextual Info: NO. UJ Li. X TYPE P O LA R ITY Low Level and General Purpose Amplifiers MAXIMUM RATINGS CASE Pd mW 'c (mA) V CEO (V) V CE(SAT) 'c min max (mA) VCE (V) max 'c (V) (mA) Cob N.F. max max (MHz) (pF) (dB) 4 20 15 10 fT min 2SC858 2SC900 2SC923 2SC945 2SC1000

2sc3855

Abstract: 2SC3858 2SC3898 2sa1494 2SC3859 2SA1491 2SA1492 2SA1493 2SA1495 2SC3856
Contextual Info: - m fT Vc e V (MHz) ton tf (Ms) m tstg (m s ) (m s ) ft Cob (max) (pF) tt ( 1 3 = 2 5 * 0 Cre (max) (pF) il [*EPfätypfiI3 Œ g □ y-fv 14 ;lJj Ê ft m # mm mm m % M £ -12 -0.5 0.3* 0. 2* 0.9* 2SC3855 (MT100) BCE 2SA1491 -12 -0.5 0.6* 0.2* 0.9* 2SC3856

2SC930

Abstract: 2SC947 2SC948 2sc922 2SC1923-O 2SC929 2sc717
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H„ VcE Hrf v* (m W ) Ic (mA) VcEO (V) min max N N N N N TO-92A TO-72G TO-72G TO-92B TO-72G 625 140 200 200 120 50 30 20 50 20 15 32 15 19 15 20 40 40 40 35 170 150 300 # 2SC829 2SC838

TO-92B

Abstract: 2SC959 2SC1175
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS V ceo P« Ic mW (V) (A) H,¡•E POLA­ RITY CASI 2SC938 2SC959 2SC10Q8 2SC1175 2SC1209 N N N N N TO-92B TO-39 TO-39 TO-92B TO-92B 250 700 800 300 500 0.2 0.7 0.7 0.2 0.7 60 80 60 50 20 50 40 80 40 55

2SC 8050

Abstract: 2SC 8550 2sd 8050 8050 8550 2sd327 2SC185 2SCI175 2sa723 2SA598
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE VcEO Pd Ic mW (A) VCER* (V) H FE ^CE(sat) min max Ic VfE max Ic (mA) (V) (V) (A) fi­ C0h r n in max (MHz) (MHz) COMPLE­ MENTARY TYPE 2SA659 2SA683 2SA708 2SA719 P P P P TO-92B

2sc1781

Contextual Info: 2SC17SKH >'J3>NPN I t L T P SILIC O N Wt NPN E PIT A X IA L LT P HIGH FR EQ U EN C Y A M PLIFIER MEDIUM S P E E D SW IT C H IN G ta s « « l . i ì "j 9 ’ E m itte r 2 .^ — \ B a se C o lle c to r *r — X : (C a s e ) (D im en sio n s in mm) (JE D E C

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SA899

Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
Contextual Info: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable