2SB50 Search Results

2SB507

Abstract: 2SD313
Contextual Info: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier

2sd315

Abstract: 2SB509
Contextual Info: SavantIC Semiconductor Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SD315 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION Fig.1 simplified outline (TO-66) and symbol

2sb506

Contextual Info: Inchange Semiconductor Product Specification 2SB506 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·Low frequency power amplification ·Power switching application PINNING see Fig.2 PIN DESCRIPTION

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2SB528

Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507

TRANSISTOR B507

Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

2SD315

Abstract: 2SB509
Contextual Info: Inchange Semiconductor Product Specification 2SD315 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SB509 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base 2

Sanyo D313

Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
Contextual Info: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

2SD313

Abstract: 2SB507 2sd313 equivalent 2SD313 E
Contextual Info: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE

2SB 2045

Abstract: 2SD313 B507D 2sd314 2sb507 sanyo b 507 2SB507
Contextual Info: "SANYO SEMICONDUCTOR CORP 12E 2SB507, 508 D I 711707t 0003178 T'33' ? 2SD313, \ . 314 PNP/ npn Triple D iffu sed P lan a r 2012 201OA S ilic o n T ra n sisto rs Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.

2SB509

Abstract: 2SD315
Contextual Info: JMnic Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Complement to type 2SD315 APPLICATIONS ・For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2sd313 equivalent

Abstract: 2SD313 2sd313 applications 2SB507
Contextual Info: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

2SD313

Abstract: 2SB507 transistor 2sd313
Contextual Info: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507

2sb506

Contextual Info: SavantIC Semiconductor Product Specification 2SB506 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·Low frequency power amplification ·Power switching application PINNING see Fig.2 PIN DESCRIPTION

2SB506

Contextual Info: SavantIC Semiconductor Product Specification 2SB506 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·Low frequency power amplification ·Power switching application PINNING see Fig.2 PIN DESCRIPTION

2SB509

Abstract: 2SD315
Contextual Info: SavantIC Semiconductor Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SD315 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION 1 Base 2

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

2SD313

Abstract: 2sd313 equivalent 2SB507
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507

TRANSISTOR 2SB507

Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313

Contextual Info: 2SB507E Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m

2S8834 NEC

Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A

2SB507

Abstract: 2SD389
Contextual Info: 2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)