2SA90 Search Results

2SC1568

Abstract: 2SA900
Contextual Info: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING

204S60

Abstract: 2SC1568 2SA900 2SC15
Contextual Info: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-emitter saturation voltage VcEcsa» • High performance at low supply voltage

2SA909

Abstract: 2SA908 2sa907 2SC1584
Contextual Info: SavantIC Semiconductor Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC1586

Abstract: 2SA909
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA909 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) ·Complement to Type 2SC1586 APPLICATIONS ·Designed for amplifier and general purpose applications.

2SA900

Abstract: 2SC1568
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS

2SC1915

Abstract: 2SA905 T092 I57H
Contextual Info: =mmmmh=7y=y^? 2SA905 > i a V P N P i k ‘ let s 2 SA 9 0 5 Ü , m USii frJÍCDi/ ') 3 y P N P i f ^ í r ^ 7 -* 7 , v 5 v i ^ x i r t r , f ê J S J i M Œ W s f f l t l tk £ íH \ faoi-fo * s r3¡ < . a iíf- t, s jffis n r S ih F E i : " h F E i l ; iS 'l4 * ';# ' f f ; i : j a < .

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA908 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo=-150V(Min.)

2sc1586

Contextual Info: <z3£fni-£onau.ct:oi iJ-^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA909 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo= -200V(Min.)

200YA

Abstract: 2SA9015 k10e
Contextual Info: Transistors 2SA9015 USHA INDIA LTD LOW FREQUENCY, LOW NOISE AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature

2SA904A

Abstract: 2SA904 cl 100 hie hre hfe
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA904A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA904A is a silicon PNP epitaxial type high voltage transistor OUTLINE DRAWING Unitrmm ¿5.6MAX designed for low frequency voltage amplify application of small signal. Due to

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

2SC1568

Abstract: 2sc* pnp 2SA0900 2SA900
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SA909

Abstract: 2SA908 2SA907 2SC1584
Contextual Info: AOK AOK Semiconductor Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2 SC 1584/1585/1586 APPLICATIONS • For power switching and general purpose applications PINNING see Fig.2 PIN

2SA909

Abstract: 2SA908 2SA907 2SC1584
Contextual Info: Inchange Semiconductor Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)

2SC1584

Abstract: 2SA907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA907 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1584 APPLICATIONS ·Designed for amplifier and general purpose applications.

BC132A

Abstract: 2SA900 2SC1568
Contextual Info: PANASONIC INDL/ELEKiSENI} 7SC D J t^32flS4 ÜODfl?! 1 "|T •_T- ys.-i7 S 2 A 9 '> U 2SA900 P N P x hf $ 4- '> t \/ ~f \s — i~ f l2 /S i P N P Epitaxial Planar Power Amplifier > ~fl) S > $ U/ Complementary Pair with 2SC1568 • 4# ^ / F e a t u r r e s

CTX12S

Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

PT-625mW

Abstract: 2SA9012 2SA901 mma 300
Contextual Info: Transistors 2SA9012 USHA INDIA LTD 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • High total pow er dissipation. (PT=625mW) • High Collector Current. (ic =-500mA) • Encellent hFE linearity ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2SA908

Abstract: 2SC1585
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA908 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) ·Complement to Type 2SC1585 APPLICATIONS ·Designed for amplifier and general purpose applications.

2SA900

Abstract: 2SC1568
Contextual Info: Power Transistors 2SA900 2SA900 Silicon PNP Epitaxial Planar Type P ackage Dim ensions A F Pow er A m plifier C om plem entary Pair with 2 S C 1 568 Unit ! mm • Features • Low co llector-em itter saturation voltage V c e i s » i i • TO-126 package, no insulator needed w hen fixing to a heat sink

2SA900

Abstract: 2SC1568
Contextual Info: AOK AOK Semiconductor Product Specification 2SA900 S ilicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1568 • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier PINNING PIN DESCRIPTION

2SA909

Abstract: 2SA907 2SA908 2SC1584
Contextual Info: JMnic Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1584/1585/1586 APPLICATIONS ・For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base