2SA754 Search Results

2SA755

Abstract: 2SC1419 2SA754
Contextual Info: JMnic Product Specification 2SA755 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1419 ・Note:Type 2SA754 with short pin APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter

2SA755

Abstract: 2sc1419 2SA754 2sa7 2sc141
Contextual Info: Inchange Semiconductor Product Specification 2SA755 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION

2SA754

Abstract: 2SC1419 2SA755
Contextual Info: AOK AOK Semiconductor Product Specification 2SA755 S ilicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1419 • Note:Type 2SA754 with short pin APPLICATIONS • For low frequency power amplifier applications PINNING

2SA755

Abstract: 2SC1419 2SA754
Contextual Info: SavantIC Semiconductor Product Specification 2SA755 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION

2SA754

Contextual Info: SavantIC Semiconductor Product Specification 2SA754 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Inverters;converters ·Power amplification ·Switching regulator ,driver PINNING PIN DESCRIPTION

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA754 Silicon PNP Power Transistor ^^F 1 1 \N LEASE DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -50V(Min) • Low Collector Saturation Voltage-

2SA754

Abstract: B2200
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.3V(Max.) @ IC= -1.5A ·Good Linearity of hFE APPLICATIONS

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sa726

Abstract: 2SA798 2Sa750 2SA706 2sa735 2SA798 equivalent 2SA725 2SC1432 2SA773 2SA762
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA701 -30 -5 -50 200 125 200 -6 -1 80* 12 2SA702 -50 -5 -50 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC1417

Abstract: 2SC1438 2SC1451 2SC1429 2N6256 2SC1494 2SC1497 2SA773 2SC1425 2SC1452
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 200W 2SC1401 400 5 30A 175 25 5 15A 20* (Tc=25ºC) 70W 2SC1402 140 6 8A

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173