2SA720A R Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2SA720A

Abstract: 2SA720A R 2SC1318A DSA003766 2SA720A transistor
Contextual Info: Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SA0720A

Abstract: 2SA720A 2SC1318A
Contextual Info: Transistor 2SA0720A 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10

A933

Abstract: SA1015 2sa864 A933 S 2SA564 2sa872 2sa733 SA112 2SA718A 2SA984
Contextual Info: - 16 - S tt s € Type No. Manuf, n z. SANYO M s£ TOSHIBA S m. NEC £ HITACHI 1 ± l FUJITSU fâ T MATSUSHITA m. = MITSUBISHI □ — A ROHM 2SA933 * 2SA 852 H # 2SA1783 2SA987 * 2SA 853 H * 2SA929 2SA987 2SA 854 *~ □ — A 2SA984 2SA929 2SA970 2 SA 112 7

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

JE 1692

Abstract: 2SB811 2SB1443 2SB1242 2SA1586 2SB1376 2SB1434 2SA1323 2SA1227 2SA1431
Contextual Info: - 38 - S! tt « Typ e No. 2SA 1681 « Manuf. % H ft SANYO n s TOSHIBA N EC tL HITACHI s d r iS F UJ ITSU «5 T MAT S U S H I T A 2 SA 1304 2SB1096 2SB928 2SA 1685 - = & 2SA1586 2SA1613 2SB1218A 2SA 1686 □ — A 2SA1015 2SAU75 2SA 1687 h 2SA 1688 = ft 2SA 1689

2SD2436

Abstract: 2SD2433 2SD2434 2S897 2SD1995 2SC3312 2sb1446 2SD2458 2SD2529 D49 transistor
Contextual Info: This I Silicon Small Signal Transistors _o UJ ru □a Copyrighted Ln >General-use Low Frequency Amplifiers and Others Package No. Applica­ tion Functions nj S S Mini Type (D1) ! 2SB1462 I2SD2216 □ □ b-1 S Mini Type (D5) ( 2SB1218A I 2S D I8I 9A Mini Type

2SA101S

Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
Contextual Info: - m « Type No. a € Manuf. s -E SANYO TOSHIBA 2SA 1124 fé T 2SA 1125 . të T 2SA 1127- fé T 2SA1783 2SA1015 2SA 1128 K T 2SB698 2SA562TM 2SA 1129 a a 2SB919 2SB1018 2SA 1133 „ fâ T 2SA1208 S ÍL HITACHI # ± ¡I FUJITSU T MATSUSHITA 2SB921L 2SA933LN

2SB737

Abstract: 2SA1038 2sa1015 2SB873 2SA999 2SA1104 2SA847 2SA1015 ba 2SA1232 2SA933S
Contextual Info: - 22 m - s tt 2 SA 1078 ^ 2SA 1079 2SA 1080 . 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1081 _ 10 82 1083 1084 , 1085 ^ 1090 ' 1091 2SA 1092 -• 2SA 1093 2SA 1094 .» 2SA 1 095 . 2SA 10 9 6 ^ m 1096A 0 ÍL 0 ÍL 0 ÍL 0 it * 2 S 3? fé T sí 2 S * ^ fé T = m 11 02 - v-y'ry

2SC1313

Abstract: 2SC1302 2sc1400 2SC1312 2SC1389 2SC1370 2SC1305 2SC1371 2SC1364 2SC1307
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC1301 250 5 30A 2SC1302 400 5 30A 2SC1303 40 4 300 2SC1304 300 5 500 Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA)

2SC805A

Abstract: 2SA923 131S 2SC805 2SA720A 2S67A 1338A
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and