2SA67 Search Results

2SC1061

Abstract: 2SC1060 2Sc1060 equivalent 2SA671 2SC1061 C
Contextual Info: Product Specification www.jmnic.com 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications

2SA670

Abstract: 2SA671 2SC1061
Contextual Info: Inchange Sem iconductor Product Specification S ilicon PNP Power Transistors 2SA671 DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC1061 • Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS - /*v • Designed for use in low frequency

ST2SC

Abstract: 2SC1213 2SC1213A st 120 transistor transistor 2sc1213 2sc1213 transistor ST-2Sc transistor 2SA673 2SA673 2SA673A
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

2sc1213

Abstract: transistor 2SA673 2SA673 2SA673A 2SC1213A 2SC1213CTZ-E 2SC1213DTZ-E PRSS0003DA-A SC-43A 2SC1213ABTZ-E
Contextual Info: 2SC1213, 2SC1213A Silicon NPN Epitaxial REJ03G0684-0200 Previous ADE-208-1048 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA673A TRANSISTOR PNP 1. EMITTER FEATURES z Low Frequency Amplifier z Complementary Pair with 2SC1213A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1061

Abstract: 2SC1060 2Sc1060 equivalent 2SC1061 B 2sc1061 equivalent 2sc1061 datasheet 2SA671
Contextual Info: Inchange Semiconductor Product Specification 2SC1061 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power

Contextual Info: 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

Contextual Info: Preliminary Datasheet 2SC1213, 2SC1213A R07DS0431EJ0300 Previous: REJ03G0684-0200 Rev.3.00 Jun 07, 2011 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A

2SC1213

Abstract: 2SC1213A transistor 2SA673 2SA673 2SA673A Hitachi DSA00395
Contextual Info: 2SC1213, 2SC1213A Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1213

2SA673A

Abstract: 2SC1213A
Contextual Info: 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage

2SA671

Abstract: 2SC1061 2SA670 2SC1061 PNP
Contextual Info: JMnic Product Specification 2SA671 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1061 ・Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS ・Designed for use in low frequency power amplifier applications

2Sa679

Abstract: 2SC1079 2SA680
Contextual Info: JMnic Product Specification 2SA679 2SA680 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1079/1080 ・High power dissipation APPLICATIONS ・For audio power amplifier applications PINNING see Fig.2 PIN DESCRIPTION

ST2SC

Abstract: 2SC1213 transistor 2SA673 2SA673 2SA673A 2SC1213A ST2SA673
Contextual Info: ST 2SC1213 / 2SC1213A NPN Silicon Epitaxial Planar Transistor Low frequency amplifier applications. The transistor is subdivided into three groups, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 2SA673 and ST 2SA673A are recommended.

2SA673

Abstract: 2SA673A 2sa673a hitachi Hitachi 2SA Hitachi DSA002754
Contextual Info: 2SA673, 2SA673A Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC1213 and 2SC1213A Outline Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA673 2SA673A Unit Collector to base voltage VCBO –35 –50 V Collector to emitter voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1213A TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Frequency Amplifier z Complementary Pair with 2SA673A 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1213

Abstract: 2SA673 2SA673A 2SC1213A
Contextual Info: HITACHI 2 S C 1 SIL IC O N N'PN 2 1 3 , 2 S 1 C _ e p it a x ia l 2 1 3 A _ L O W F R E Q U E N C Y A M P LIF IE R Complemonia/y pair with 2SA673 and 2SA6V3A _ I. hcniucr t- Ceifottd* L »f»»JmTJj I A B S O L U T E M A X IM U M R A T IN G S <Ta=25*C

2SA679

Abstract: 2SA679Y 2SA679-R 2SA680 2SC1079 2SA679R TRANSISTOR 2SC1080 2sa679 toshiba transistor 2SC1079 2SC1080
Contextual Info: v 'j3 > P N P x k °^ + V7 2SA679, 2SA680 SILICON PNP EPITAXIAL MESA TRANSISTOR TENTATIVE O A u d io P o w e r A m p lifie r A p p lic a tio n s • a • 25.O0M ax 21.0 ¡(Ma : P c = 100W ( T c = 25°C) v ? fi : K W E E -T rf V ceo V = - 1 2 0 V (2SA 679)

2SA679

Abstract: 2SC1079 2SA680 2SA679 2SC1079
Contextual Info: SavantIC Semiconductor Product Specification 2SA679 2SA680 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC1079/1080 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING see Fig.2 PIN

2SA670

Contextual Info: SavantIC Semiconductor Product Specification 2SA670 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Inverters;converters ·Power amplification ·Switching regulator ,driver PINNING PIN DESCRIPTION

transistor 2SA673

Abstract: 2SA673
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA673 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.4 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO : -35 V

2SC1000

Abstract: 2SC828 P 2SC735 2SC1330 2SC923 c1213a 2SC537 2SC373 2SA640 2SA673A
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. MAXIMUM RATINGS POLA­ RITY CASE 2SA561 2SA564 2SA564A 2SA640 2SA641 P P P P P 2SA666 2SA666A 2SA673A 2SA721 2SA722 H FF- VcE sal fT min max le (mA) (MHz) (MHz) C 0b N.F. max le (mA) VCE (V) max 400 tt 700 tt

Contextual Info: | * 2SA673 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to 2SC1213 * Collector-Emitter Voltage VCEO =-35V ABSOLUTE MAXIMUM RATINGS at Tan*25#C C haracteristic

2SA673A

Abstract: 2SC1213A ic100na NPN transistor ECB TO-92
Contextual Info: 2SA673A 2SC1213A SILICON TRANSISTOR 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

Contextual Info: H ITACHI 2SA673A « •SILICON PNP EPITM SALÓW FR EQ U EN C Y A M PURER MEDIUM SPEED SWITCHING 1 f . :xrr ~i— i , iL i_ - i f >«1 2- O D; i ' B. ./ ' ■ +■ ' _ i k U m J. JE D E C 104» ■ A&sotüTG m m i m m u m m s-d ít ^ i MAXIMUM Ç Û lL Ê C f OH CMSSIMmON