2SA186 Search Results

2SA1869

Abstract: 2SC4935
Contextual Info: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃

Contextual Info: Ordering number:EN 4-720 S4%ro 2SA1865 N o.4720 P N P E p it a x ia l P l a n a r Silicon T r a n s i s to r Muting Circuits, Driver Applications F e a tu re s • On-chip b ia s re s is to rs R1 = lO kil, R 2 = 10kf2 . • V ery sm all-sized pa ck ag e m a k i n g 2 SA 1865-applied se ts sm all a n d slim.

Contextual Info: 2SA1869 SILICO N P N P EPITAXIAL T Y P E P C T P R O C E S S U nit in mm PO W ER AM PLIFIER APPLICATIONS. 10 + 0.3 • • . ¿3 .; to .; 2 .7 * 0 2 Good Linearity of hpEComplementary to 2SC4935. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

a1869 transistor

Abstract: a1869 2SA1869
Contextual Info: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

c4935

Abstract: 2SC4935 2SA1869 IC502
Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol

2SA1807

Contextual Info: 2SA1807 2SA1862 Transistors High-voltage Switching Transistor Telephone, Power supply 2SA1807 • F ea tu re* ^Absolute m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage (V c e o = —600V) 2 ) L o w V c e i w i ) . (T y p .—0.25V at Ic/I b = —3 0 0 /—60m A)

2SA1869

Abstract: 2SC4935
Contextual Info: TOSHIBA 2SC4935 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC493 5 Unit in mm P O W E R A M P L IF IE R A PPLIC A TIO N S • • 10 ±0.3 Good Linearity of kpg. Complementary to 2SA1869 and 5 Watts Output Applications. ^3.2 ± 0.2

2SA1860

Abstract: 2SC4886 DSA0016504
Contextual Info: 2SA1860 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4886 VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCE(sat) W fT 150 °C COB –55 to +150 °C Tstg IC=–5A, IB=–500mA –2.0max V VCE=–12V, IE=2A

C4935

Abstract: C4935 Y 2SC4935
Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol

sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN 2SC3855 SANKEN sanken power transistor 2sa1295 SANKEN 2sc3909 2SC3854 sanken 2SC2922 sanken transistor 2Sa1491 SANKEN 2SA1186 SANKEN 2SC4138
Contextual Info: CONTENTS • Transistor Selection SANKEN POWER TRANSISTORS 2SC3854 •83 2SC4512 125 Guide .2 2SA1860 .43 2SA1907 . .4 4 2SC3855 84 2SC4517 126 ■ Reliability. 8 2SA1908 . 45

2SA1862

Abstract: 3335 3335 datasheet 82721
Contextual Info: SPICE PARAMETER 2SA1862 by ROHM TR Div. * 2SA1862 PNP BJT model * Date: 2006/11/24 .MODEL 2SA1862 PNP + IS=700.00E-15 + BF=148.96 + VAF=100 + IKF=1.3335 + ISE=700.00E-15 + NE=1.5139 + BR=5.9640 + VAR=100 + IKR=3.0448 + ISC=254.07E-12 + NC=1.5132 + NK=.70497

2sa1861

Abstract: 34TI
Contextual Info: h7 2SA1861 /T r a n s is to r s 7° U P N P '> U =l > h 7 > V ^ ^ Triple Diffused Planar PNP Silicon Transistor “f > ^ /H ig h Voltage Switching 2SA 1861 • 1 /Dim ensions Unit : mm 1) 6,5 ± D.2 3.4 ± 0.? BVCE O = -4 0 0 V 2) a U 7 ? t t * H i8 liA

2SA1869

Abstract: 2SC4935
Contextual Info: TOSHIBA 2SA1869 2 S A 1 869 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Good Linearity of hEE Complementary to 2SC4935 r <v> o 1.1 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

marking CA

Abstract: CE 472M
Contextual Info: Ordering number : EN 4 7 2 1 I SA IVO 2SA1866 No.4721 PNP Epitaxial Planar Silicon Transistor Muting Circuits, Driver Applcations Featu res • On-chip bias resistors R1 = 47kfi, R2 = 47kft . • Very small-sized package making 2SA1866-applied sets small and slim.

TRANSISTOR 3F z

Abstract: pnp transistor 400V 500mA 2SA1862 2SA1862F5
Contextual Info: hÿ 2 > V 7k£ SA /Transistors 1 8 6 2 2SA1862F5 F5 PNP y y □ > by> Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^ ‘^•jiS/Dimensions (Unit: mm) 1) B VceO =~400V 2) □ VCE (s e t)= -0 .3 V (Typ.)

2SA1864

Abstract: 47192
Contextual Info: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.

"marking ca"

Abstract: 2SA1866 ITR04950 ITR04951 ITR04952 ITR04953 ITR04954
Contextual Info: Ordering number:ENN4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.

2SC4886

Abstract: 2SA1860
Contextual Info: SavantIC Semiconductor Product Specification 2SC4886 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SA1860 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol

2SA1869

Abstract: 2SC4935
Contextual Info: SavantIC Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25

2Sa1860

Abstract: 2SC4886
Contextual Info: SavantIC Semiconductor Product Specification 2SA1860 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Complement to type 2SC4886 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

mosfet HF amplifier

Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Contextual Info: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15

Contextual Info: 2SA1862 Transistors High-voltage Switching Transistor −400V, −2A 2SA1862 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Max. VCE (sat) = −0.5V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A.

"marking ca"

Contextual Info: Ordering number:4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.

2SA1869

Abstract: 2SC4935
Contextual Info: TO SH IBA 2SA1869 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg