2SA176 Search Results

Transistor B C 458

Abstract: c458 2sa1766
Contextual Info: O rd e rin g n u m b e r: EN 3182B N 0.3182B 2SA1766 P N P Epitaxial P lan ar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications F e a tu r e s . A doptionofFB E T , MBIT processes . H igh DC cu rren t gain hpE = 500 to 1200 . Large cu rren t capacity

silicon pnp transistor

Contextual Info: O rd e rin g n u m b e r: EN 3180B NO.3180B // 2SA1764 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features - F ast switching speed •Low collector saturation voltage ■High gain-bandwidth product • Small collector capacitance

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)

2SC1473

Abstract: 2SA1018 2SA1767 2SC1473A TRANSISTOR 2sc1473
Contextual Info: Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 High collector to emitter voltage VCEO. High transition frequency fT.

Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 2.5±0.1 1.0 4.5±0.1 3.5±0.1 R 0.9 R 0.7 4.1±0.2 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm 2.5±0.1 6.9±0.1 1.0 R 0.9 • Absolute Maximum Ratings * (Ta=25˚C) (0.85) Symbol Ratings Unit Collector to base voltage VCBO

2sc1473

Abstract: 2sa1473
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

2sA1766

Abstract: ITR04526 ITR04527 ITR04528 ITR04529 ITR04530 marking al
Contextual Info: Ordering number:ENN3182B PNP Epitaxial Planar Silicon Transistor 2SA1766 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions unit:mm 2038A [2SA1766] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes.

2SC4612

Abstract: 2SA1768 ITR04536 ITR04537
Contextual Info: Ordering number:ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions • Color TV sound output, converter, inverter. unit:mm 2064A Features [2SA1768/2SC4612] · Adoption of MBIT process.

2SA1762

Abstract: 2SC4606
Contextual Info: Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1762 Unit: mm 6.9±0.1 1.0 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1767

Abstract: 2SC1473A
Contextual Info: Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. • Absolute Maximum Ratings 13.5±0.5 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SA1768

Abstract: 2SC4612 ITR04536 ITR04537 ITR04538 ITR04539 N358
Contextual Info: 注文コード No. N 3 5 8 2 2SA1768/2SC4612 No. N3582 12500 2SA1768 / 2SC4612 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高耐圧スイッチング用 用途 ・カラーテレビ音声出力 , コンバータ , インバータ。

Contextual Info: 2SA1768 Ordering number : EN3582A SANYO Semiconductors DATA SHEET 2SA1768 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applicaitons • Color TV sound output, converter, inverter Features • • • Adoption of MBIT process

Contextual Info: 2SA1764 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)8.0

marking al

Abstract: 200a smd 2sA1766
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain hFE=500 to 1200 . Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25

Contextual Info: 2SA1769 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)700m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)250m

JJ-500

Abstract: 2SA1768 2SC4612 SC4612
Contextual Info: Ordering num ber:EN 3582 SAmYO 2SA1768/2SC4612 No.3582 PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications A pplications . Color TV sound output, converter, inverter F eatu res . Adoption of MBIT process . High breakdown voltage, large current capacity

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: TO SH IBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE Unit in mm 5.1 MAX Low Colleetor-Emitter Saturation Voltage : VCE sat “ —0.5V (Max.) (Ic = -1.5A ) High Speed Switching Time : ^ ^ = 0.2/^ (Typ.)

Contextual Info: Transistors 2SA1762 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 Unit: mm Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2

Contextual Info: Ordering number:ENN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons Package Dimensions • Color TV sound output, converter, inverter. unit:mm 2064A Features [2SA1768/2SC4612] · Adoption of MBIT process.