2SA171 Search Results

2SA1718

Contextual Info: SavantIC Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application

A1710

Abstract: c4490 2SC1490 2SA1710 2SC4490 T3G8 AL710
Contextual Info: O rde rin g nu m b e r : EN 3097 2SA1710/2SC4490 No.3097 PNP/NPN Epitaxial Planar Silicon Transistors High-Definiti on CRT Display Video Output Applications I F eatu re s • High breakdown voltage Vce O—300V •Excellent high frequency characteristic

Contextual Info: Ordering number: EN 3097 2SA1710/2SC4490 PNP/NPN Epitaxial Planar Silicon Transistors SAtVO High-Defmition CRT Display Video Output Applications '• iV V y ■' 1 I • Features ■High breakdown voltage V ceo — 300V ■ Excellent high frequency characteristic

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

ITR04363

Abstract: ITR04364 2SA1710 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: 注文コード No. N 3 0 9 7 2SA1710/2SC4490 No. N 3 0 9 7 20400 2SA1710 / 2SC4490 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 ・高耐圧である（VCEO ≧ 300V）

2SA1718

Contextual Info: JMnic Product Specification 2SA1718 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain. ・Low collector saturation voltage. ・DARLINGTON APPLICATIONS ・Ideal for motor drviers and solenoid drivers application PINNING

2SA1718

Abstract: "Solenoid Drivers" 2sa171 PNP 100V 2A
Contextual Info: Inchange Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application

2sc4490

Abstract: 2SA1710 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

2SA1718

Abstract: T0-220F
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1718 S ilicon PNP Power Transistors DESCRIPTION • With T 0 -2 20 F packagc • High DC current gain. • Low collector saturation voltage. • DARLINGTON APPLICATIONS • Ideal for motor drviers and solenoid

darlington transistor for audio power application

Abstract: 2SA1714 2SC4342 C11531E
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for

2SA1710

Contextual Info: Ordering number:EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

HB 541

Abstract: 2SA1714 2SC4342 TEA-509
Contextual Info: S ilic o n T ra n s is to r 2SA1714 P N P X T J U # - M > y ' j 3 > h > / \ 07 > m - h 7 > y 7 ^ m x if f l m m m£ : mm 7 °(D $ '-V > h > / \ ° 7 - h 7 > y X ^ T t 0 2SA1714W, 8.5 MAX. 03.2 ± 0.2 2.8 MAX. ^4 4t o +i M o m •e- - U > h > j$ m < D tc V) , ¡EàSEUàftiiili^ tf'iü t ' o

2SA1710

Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Contextual Info: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.

2SA1714

Abstract: 2SC4342 C11531E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

SC3416

Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
Contextual Info: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

2sb892

Abstract: 2sc4645 2sC4389 2SB1406
Contextual Info: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SC4496

Abstract: 2SC4477 2SC4494 2sc4503 tx 2G 2sc450 2sc4504 2SC4473 2SC4474 2SC4475
Contextual Info: - 204 Ta=25ti(*EP(àîc=25‘ C M 2SC4473 £ ffi S H # CRT Vid e o Out iÉ VcBO Vceo (V) (V) 120 Ì C(D C ) (A) 1 20 0 .4 Pc Pc* (W) (W) S IcBO (max) (//A) 1.8 10 10 1 le 1 (A) 0.05 Ib (A) 0.005 10 0.01 1 1 0.03 0.003 5 0. 0 0 0 1 5 2 0. 0 0 0 2 0. 0 0 0 0 4