2SA1315 Search Results

2SA1315

Abstract: 2SC3328 A1315
Contextual Info: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

2SA1315

Abstract: 2SC3328 A131 C2804 TRANSISTOR 2sa1315
Contextual Info: 2SA1315 TO SH IBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A)

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ic = lA) High Speed Switching Time : tstg = 1 0 / j s (Typ.) Complementary to 2SA1315

2SA1315

Abstract: 2SC3328 A1315 2sa1315 y
Contextual Info: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

Transistor A1315

Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
Contextual Info: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

Contextual Info: TOSHIBA 2SA1315 2 S A 1 315 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1598

Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
Contextual Info: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

c3328

Abstract: C3328 NPN Transistor 2SC3328 2SA1315
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

c3328

Abstract: 2SC3328 2SA1315
Contextual Info: 2SC3328 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3328 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

kin 52

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS PO W ER AMPLIFIER APPLICATIONS. PO W ER SW ITCHIN G APPLICATIONS. • • • U n it in mm Low Collector Saturation Voltage : v CE(sat) = - 0.5V (Max.) (Iq = - 1 A) High Speed Switching Time : tstg= 1 .0 /iS (Typ.)

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage VCE = 0.5V (Max.) (IC = 1A) • High Speed Switching Time : tstg= 1.0/iS (Typ.)