2S57 Search Results

53l diode

Contextual Info: INTEGRATED DEVICE 3ÖE D B 4025771 DGGSSÔS ñ D I D T FAST C M O S P A R IT Y B U S Integrated Device Technology, Inc. IDT54/74FCT833A IDT54/74FCT833B T R A N S C E IV E R T ’- S S . - ' è l FEATURES: DESCRIPTION: • Equivalent to A M D ’s A m 2 983 3 bipolar parity bus

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

25725.123.179

Abstract: grote hartmann pin GHW Connectors 25375123009
Contextual Info: GHW GROTE & HARTMANN ;/ VERBINDUNGSTECHNIK Aderendhulsen, Clips, Feder- und Randkontakte, Sonderstanzteile Terminal ends, Clips, spring terminals and edge connectors, special pressed parts Aderendhulsen Terminal ends DIN 46228 und ahnliche Ausfuhrungen DIN 46228 and similar types

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

Contextual Info: FAST CMOS PARITY BUS TRANSCEIVER IDT54/74FCT833A IDT54/74FCT833B Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Equivalent to AM D's Am29833 bipolar parity bus transceiver in pinout/function, speed and output drive over full temperature and voltage supply extremes

4683

Contextual Info: 4683 4 6 8 3 Triode The 46S3 is a directly-heated power triode having an anode dissipation of 15 W. max 53 F IL A M E N T R A T IN G S H eating: direct, A.C., parallel supply. Filam ent v o l t a g e . 1 / = 4 V Filam ent c u r r e n t ./ / = 0.95 A

dpx3ne

Abstract: 030-1975 bc 34s 031-1271-000 DPX2NE-26MP26MP-34B-00 CT 1061 C 4N S-249-2078-000 DPX3NE-279M-33SP-00 249-2078-000 DPXBNE-57M-34S-00
Contextual Info: MIL-C-81659 D PXN A /D PXN E C a n n o n 's D P X N A n o n -e n viro n m e n ta l. Type IV and are d e sig n e d to o p e ra te in te m p e ra tu re s ranging C o n ta c t re te n tio n o f th e s e crim p sn a p -in c o n ta c ts is D P X N E (e n v iro n m e n ta l. T ypes II and III) ra c k and

BSR15

Abstract: BSR16
Contextual Info: m bbSBTBl □□25573 ODS H A P X N AMER PHILIPS/DISCRETE BSR15 BSR16 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a m icro m in ia tu re plastic envelope, intended fo r m ediu m pow er switching and general purpose a m p lifie r applications in th ic k and th in -film circuits.

OC170

Abstract: OC169 oc44 2S125 OC45 OC171 2S93 2SA42 2SA37 2SA70
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber DC Current Gain fab/ft* Cob hFE (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) VCBO VEBO Ic (V) Electrical characteristics (Ta=25ºC) (V) Pc ºñ°í Tj 2SA12 -16 -0.5 -15 80 85 8 10 2SA13 2SA14 -12 -16 -0.5 -0.5 -15

Contextual Info: 12V/5V Low Dropout Dual Regulator with ENABLE Description The CS-8155 is a low dropout, 12V high current regulator. Also included is a standby 5V / 10mA output for powering systems with standby memory. Quiescent current drain is less than 2mA when supplying 10mA loads from