2N918 OSCILLATOR Search Results

2N918 JAN

Abstract: 2N918 2N918 JANTXV 2n918 transistor
Contextual Info: Data Sheet No. 2N918 Generic Part Number: 2N918 Type 2N918 Geometry 0013 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/301 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-72 case. • Also available in chip form using

2n918

Abstract: 2n918 transistor
Contextual Info: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC 50 mA VCE 15 V O 300 mW @ TC = 25 C PDISS O 200 mW @ TC = 25 C O O O O

Contextual Info: 2N918 asi NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS lc 50 mA V ce 15 V P diss 300 mW @ Tc = 25 °C P diss 200 mW @ TA = 25 °C Tj -65 °C to +200 °C

Contextual Info: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS 5O mA Ie o m < 15 V p d is s 3OO mW @ Te & 25 0C p d is s 2OO mW @ Ta & 25 0C

2N918

Abstract: 2N918 thermal resistance 2N918 oscillator
Contextual Info: 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.

2N918

Abstract: 2n918 data sheet 2n918 die sd91 2C918 chip type geometry
Contextual Info: Data Sheet No. 2C918 Generic Packaged Parts: Chip Type 2C918 Geometry 0013 Polarity NPN 2N918 Chip type 2C918 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high frequency oscillator, multiplier and driver

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF AND VHF AMPLIFIER MIXER AND OSCILLATOR APPLICATIONS.

2N918 JAN

Abstract: 2n918 die
Contextual Info: 2N918 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N918J • JANTX level (2N918JX)

NPN 200 VOLTS POWER TRANSISTOR

Abstract: 2N918 2N918 JANTX 2n918 die SEMICOA SEMICONDUCTORS npn transistor data
Contextual Info: 2N918 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918J • JANTX level (2N918JX)

2N918

Abstract: 2N91 2n918 die
Contextual Info: • JAN level 2N918J • JANTX level (2N918JX) 2N918 • JANTXV level (2N918JV) Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E

2N918 JAN

Abstract: 2N918UB 10VDC 2N918 oscillator 60mhz
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/301 DEVICES LEVELS 2N918 2N918UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: TYPE 2N918 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 7 3 1 1 9 8 9 , M A R C H 1 9 7 3 FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • Low Noise Figure . . . 6 dB max at 60 MHz • High Neutralized Power Gain . . . 15 dB min at 200 MHz

2N918

Abstract: 2N3600 G2053 2N918 thermal resistance 2n 918 2N360
Contextual Info: 2N918 2N 3600 SILICON PLANAR NPN HIG H-FREQUENCY OSCILLATORS AND AM PLIFIERS The 2N 918 and 2N 3600 are silicon planar epitaxial NPN transistors in Jedec T O -7 2 metal case. They are designed fo r low-nciise VH F amplifiers, oscillators up to 1 GHz, non-neutralized IF am plifiers and non-saturating circuits w ith rise and fall times o f less than 2.5 ns.

SE-5023

Abstract: SE5050 2N918 JAN TO-72 SE5055 2N918 2N3137 2n918jan J 2N918 SE8010
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER A N D OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY METAL PACKAGE P.G. V CEO h NF Cob PD (OSC. Po) dB @ f dB @ VOLTS MHz pF MIN MIN MAX 9.0 0.5 6.0 @ MAX MHz TYPE MIN SE8010 SE5023 10.8 @ 27 60 22.5 @ 45 20

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

MRF245

Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1

2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

2N4427 equivalent

Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

UHF UHF Transistors

Abstract: 2N2857 2N3478 2N998 2n5179 2N2865 2N3839 2N917 2N917A 2N918
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB V (V) (V) µA) (µ MIN MIN MIN MAX hFE @ IC @ VCE (V) (mA) MIN (V) MAX VCE (SAT) @ IC (V) (mA) MAX fT Cob (MHz) *Ccb (pF) MIN MAX 2N917 RF/IF OSCILLATOR 30 15 3.0 0.001

2N3563

Abstract: Fairchild 2N2857 BF163 se5020 2N3880 2N5130 fairchild to-106 BF159 BF167 SE5035
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz v CEO V Min C0b Pd [C ce] ta NF dB Max @f MHz 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ)

Transistor 2N3866

Abstract: P039 zt91 2N2102 2N2708 2N3866 2N4427 2N918 BFY90 BSY55
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICO N PLANAR HIGH FREQUENCY T R A N SIST O R S The transistors show n in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains

2N2708

Abstract: Transistor 2N3866 RF 2N3866 2N2102 2N3866 2N4036 2N4427 2N918 ZT91 ZT92
Contextual Info: HIGH FREQUENCY T A B L E 7 - N P N S IL IC O N P L A N A R H IG H F R E Q U E N C Y T R A N S I S T O R S The transistors show n in these tables are designed for high frequency operation Am plifier and Oscillator applications. The tables should be referred to in conjunction w ith the R F Section w hich contains details

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250