2N6277 APPLICATIONS Search Results

2N6277

Abstract: 2N6277 applications
Contextual Info: 2N6277 SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO- 204AE DESCRIPTION: The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS 5O A Ie 1OO A PEAK IB 2O A VeE 15O V Pd is s 25O W @ Te " 25 0C Tj

Contextual Info: m 2N6277 \ \ SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO-204AE DESCRIPTION: 1.550 The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS lc 50 A 100 A PEAK Ib 20 A V ce 150 V P diss 250 W @ Tc = 25 °C

2n6277

Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS

2N6277

Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications
Contextual Info: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS

2N6277

Abstract: 2N6277 applications NPN 250W LE17 180v 250w of transistor 2n6277
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.

2n6277

Abstract: 2N6274 2N6275 MOTOROLA 2N6277 transistor 2N6274
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in industrial—military power amplifer and switching circuit applications. • • • • • High Collector Emitter Sustaining —

2N6277 applications

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.

2N6277

Abstract: 2N6277 applications 2n6275 2n6274 of transistor 2n6277 transistor 0440 MOTOROLA 2N6277
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifer and sw itching circuit applications. • • • • • High Collector Emitter Sustaining —

Contextual Info: <sS&mi-Conductor ^Products., Una. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6274 2N6275 2N6277 High-Power NPN Silicon TVansistors . . . designed for use In industrial-military power ampllfer and switching circuit

2N6277

Abstract: 2N6274 2N6275 2N6277 applications transistor 2N6274 1N3879 2N6377 MOTOROLA 2N6277
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274

2n6277

Abstract: ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H ig h -P o w e r NPN S ilicon T ran sisto rs 2N 6274 2N 6275 2N 6277* . . . designed for use In Industrial-military power amplifer and switching circuit applications. *Motorola Prtf*rr»d 0*v1c* • High Collector Emitter Sustaining —

diode cc 3053

Abstract: cc 3053 diode 2N6277 equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2013. MIL-PRF-19500/514D 3 June 2013 SUPERSEDING MIL-PRF-19500/514C 20 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

MOTOROLA 2N6277

Abstract: 2N6277 applications MOTOROLA 2N6277 DIE 2N6382 3-7946 2N6277 2N6380
Contextual Info: MOTOROLA SC O I O D E S / O P T O J 6367255 MOTOROLA SC 34 DE I b 3 b ? a S S <D I O D E S / O P T O 34C 0D37i4ti S | ~ 37946 1 SILICON POWER TRANSISTOR DICE continued) 2C6277 PNP 3 3 - 0 / 2C6379 / DIE NO. — NPN LINE SOURCE — PL500.70 NPN ~ ~ D die n o .

MBR3045PT motorola

Abstract: B3045 2N2222 motorola motorola 2n2222 MOTOROLA 2N6277 motorola diode device data DIODE 638 MOTOROLA MBR3045PT-D 2N6277 applications MOTOROLA 2n2222 plastic
Contextual Info: MOTOROLA Order this document by MBR3045PT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045PT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device

B3045

Abstract: 1N5817 2N2222 2N6277 MBR3045PT
Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

Contextual Info: MBR3045WT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • •

BR2045CT

Abstract: b2045 B2045 motorola BR2035CT B2045* Motorola B2035 Single Schottky diode b2045 MBR2035CT MBR2045CT equivalent
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

1N5817

Abstract: 2N2222 2N6277 MBR3045WT MBR3045WTG
Contextual Info: MBR3045WT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • •

2n2222 equivalent

Abstract: 2N6277 2N2222 application note DATA SHEET OF transistor 2N2222 to-218 SOT-93 1N5817 2N2222 MBR3045PT MBR3045PTG 2n6277 pin out diagram
Contextual Info: MBR3045PT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for •

Contextual Info: MBR3045PT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for •

BR2030C

Abstract: MBR2015CTL B2015 tl 2n2222
Contextual Info: MOTOROLA Order this document by MBR2015CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Dual S ch o ttky Pow er R e ctifiers MBR2015CTL MBR2030CTL . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te-o f-th e-art geometry features epitaxial construction with

2n6277 pin out diagram

Abstract: 2N6277 applications 1N5817 2N2222 2N6277 MBR3045PT MBR3045PTG
Contextual Info: MBR3045PT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for •

Contextual Info: MBR3045WT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for •