2N6277 APPLICATIONS Search Results

2N6277

Abstract: 2N6277 applications
Contextual Info: 2N6277 SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO- 204AE DESCRIPTION: The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS 5O A Ie 1OO A PEAK IB 2O A VeE 15O V Pd is s 25O W @ Te " 25 0C Tj

Contextual Info: m 2N6277 \ \ SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO-204AE DESCRIPTION: 1.550 The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS lc 50 A 100 A PEAK Ib 20 A V ce 150 V P diss 250 W @ Tc = 25 °C

2n6277

Contextual Info: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS

2n6277

Abstract: 2N6274 2N6275 MOTOROLA 2N6277 transistor 2N6274
Contextual Info: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in industrial—military power amplifer and switching circuit applications. • • • • • High Collector Emitter Sustaining —

Contextual Info: <sS&mi-Conductor ^Products., Una. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6274 2N6275 2N6277 High-Power NPN Silicon TVansistors . . . designed for use In industrial-military power ampllfer and switching circuit

diode cc 3053

Abstract: cc 3053 diode 2N6277 equivalent
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2013. MIL-PRF-19500/514D 3 June 2013 SUPERSEDING MIL-PRF-19500/514C 20 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

2N2222 motorola

Abstract: B3045 340F-03 motorola 2n2222 MBR3045WT
Contextual Info: MOTOROLA Order this document by MBR3045WT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045WT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device

MBR3045PT motorola

Abstract: B3045 2N2222 motorola motorola 2n2222 MOTOROLA 2N6277 motorola diode device data DIODE 638 MOTOROLA MBR3045PT-D 2N6277 applications MOTOROLA 2n2222 plastic
Contextual Info: MOTOROLA Order this document by MBR3045PT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045PT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device

B3045

Abstract: 1N5817 2N2222 2N6277 MBR3045PT
Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

BR2045CT

Abstract: b2045 B2045 motorola BR2035CT B2045* Motorola B2035 Single Schottky diode b2045 MBR2035CT MBR2045CT equivalent
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

1N5817

Abstract: 2N2222 2N6277 MBR3045WT MBR3045WTG
Contextual Info: MBR3045WT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • •

BR2030C

Abstract: MBR2015CTL B2015 tl 2n2222
Contextual Info: MOTOROLA Order this document by MBR2015CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Dual S ch o ttky Pow er R e ctifiers MBR2015CTL MBR2030CTL . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te-o f-th e-art geometry features epitaxial construction with

2n6277 pin out diagram

Abstract: 2N6277 applications 1N5817 2N2222 2N6277 MBR3045PT MBR3045PTG
Contextual Info: MBR3045PT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for •

Contextual Info: MBR3045WTG Switch Mode Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • •

Contextual Info: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MBRP20030CTL Designer's Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon

2N2222 motorola

Abstract: RECTIFIER DIODES Motorola
Contextual Info: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r M BRF1045 The S W IT C H M O D E Power Rectifier employs the Schottky Barrier principle in a large area m etal-to-silico n power diode. S ta te -o f-th e -a rt geom etry features

b2045

Abstract: B2035 B2045 motorola MBR2045CT equivalent MBR2035CT B2045* Motorola rectifier 300 amp 1N5817 2N2222 2N6277
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

Contextual Info: MOTOROLA Order this document by MURP20020CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MURP20020CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES 200 VOLTS POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited

2n2222 motorola

Abstract: rectifier data Schottky Power Rectifier Diode Marking 1e
Contextual Info: MOTOROLA Order this document by MBRP30060CT/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MBRP30060CT Designer's Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 300 AMPERES 60 VOLTS POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon

1N5817

Abstract: 2N2222 2N6277 MBRP20060CT MBRP20060CTG
Contextual Info: MBRP20060CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • Dual Diode Construction − May Be Paralleled for Higher Current

B2030

Abstract: 2n22222 1N5817 2N2222 2N6277 MBR2030CTL B-2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact.

b1045 diode

Abstract: B1045 B1045 TO-220 Motorola B1045 diode b1045 2n2222 motorola B1045-1 b1045 ON RECTIFIER DIODES Motorola 1N5817
Contextual Info: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF1045 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

B2045G

Abstract: B2045G AKA
Contextual Info: MBRJ2045CTG Product Preview SWITCHMODE Power Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

b1045 diode

Abstract: B1045 diode b1035 B1035 Motorola B1045 diode b1045 2N2222 motorola 1N5817 2N2222 2N6277
Contextual Info: MOTOROLA Order this document by MBR1035/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR1035 MBR1045 . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: