2N6099 NPN Search Results

2N6099

Abstract: 2N6101 2n6099 npn 2N6098 2N6100
Contextual Info: Inchange Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High current capability APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN

2N6099

Abstract: 2N6101 2N6098 2N6100 2n6099 npn 6099
Contextual Info: SavantIC Semiconductor Product Specification 2N6098 2N6099 2N6100 2N6101 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION

2N6101

Abstract: 2N6099 2N6098 2N6100 6099 2n6099 npn
Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION ・・With TO-220 package APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

7 amps pnp transistor

Abstract: b0243c B0239C NPN 1.5 AMPS POWER TRANSISTOR b0244c B0239A npn transistor bd243c PNP POWER TRANSISTOR TO220 B0244A 75W NPN TO220
Contextual Info: PLASTIC POWER P L A S T IC P O W E R T R A N S I S T O R S E L E C T O R C H A R T lc 4 Amps VCE° Volts N PN PN P 5 Amps N PN 7 Amps PN P N PN PN P > 7 Amps N PN PN P 10 Amps NPN 2N6288 2N6111 30 2N6103 40 BD239 BD240 BD241 BD242 BD243 BD244 BD243A BD244A 2N6099

2N3055 TO-220

Abstract: 7 amps pnp transistor 2N3055 2N6103 B0243C 2N3055 TO220 BD243 TRANSISTOR T0220 2N6101 75W PNP
Contextual Info: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety

TIP 2n3055

Abstract: tip41c tip42c 2n3055 2N3055 TO-220 2n3055 application note OF transistor 2n3055 to-3 package 7 amps pnp transistor 2N3055 TO220 NPN 1.5 AMPS POWER TRANSISTOR n6111 2N6103
Contextual Info: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching

Contextual Info: PLESSEY SEHICOND/DISCRETE 'IS NPN DIFFUSED JUNCTION i - 33. D ËT | 725GS33 □oo4cmb j / T A B L E 1 - N P N S IL IC O N D IF F U SE D J U N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a

2N3055 TO-220

Abstract: 2n3055 to 220 2N3055 TO220 2N3055 2N6103 FGT3055 "Solenoid Drivers" 2N3442 2N3054 2N3441
Contextual Info: NPN DIFFUSED JUNCTION T A B L E 1 - N P N S IL IC O N D IF F U S E D J U N C T IO N T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching

2N3055

Abstract: 2N3055 TO220 2N3055 TO-220 "Solenoid Drivers" 2N3442 2N6103 2N3054 2N3441 2N6099 2N6101
Contextual Info: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety

BD278

Abstract: RCA3055 2N5578
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575

2N3055 TO-220

Abstract: FGT3055 2N3054 2N3055 2N3440 2N3441 2N3442 2N3583 2N6099 2N6101
Contextual Info: NPN DIFFUSED JUNCTION TABLE 1 -N P N SILICON DIFFUSED JUNCTION TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical application areas include a wide variety of power switching

Contextual Info: Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ 1C hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ 1C (V) (A) MAX fT (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60

transistor c117

Abstract: JAN2N3055 C116 2N3232
Contextual Info: SOLITRON DEVICES INC TSD D ~ X - g >\ -o \ fl3bflbOS 0002TG7 7 ^ [^ © ü © ? © A T M ,© * MEDIUM VOLTAGE a lit r o • Devices, inc CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 45) CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.

SE9300

Abstract: 2N3715 FAIRCHILD 2N4909 2N6383 2N5878 2N6053 2N6054 2N6055 2N6056 2N6103
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VcEO Item DEVICE NO. Polarity NPN | PNP v CEO hFE V Max Min/Max @ic A v CE(sat) V Max @ ic A *T MHz Min(Typ) PO(Max) W TC=25°C (Cont'd) Package No. •c = 8.0 A Max Continuous (Cont’d)

Contextual Info: Power Transistors f TO-220 Case TYPE NO. NPN PNP «C PD bvcbo BVCEO A (W) (V) (V) MIN MIN tm MAX MAX • ic (A) VCE(SAT) @ 1C (V) (A) fr (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

2N6476

Abstract: 2N5294 2N5296 2N5298 2N5490 2N5492 2N5494 2N5496 2N6099 2N6101
Contextual Info: O Power Transistors TO-220 Case TYPE NO. NPN PNP >C PD A (W) MAX @ ic hFE BVCBO BVCEO (A) (V) 00 MIN MIN MIN MAX VCE(SAT) @ IC (V) (A) fT (MHz) MIN MAX 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

2N3055

Abstract: 2N3055 TO-220 2N3054 2N3440 2N3441 2N3442 2N3583 2N3584 2N6099 2N6101
Contextual Info: NPN DIFFUSED JUNCTION TABLE 1 - NPN SILICON DIFFUSED JUNCTIO N TRANSISTORS The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a w ide variety

Contextual Info: SEMELAB LTD 3?E J> 8133107 00D005S 7 • SMLB ■iMIJSMJ:1 Type No. Option 2N6038 Polarity Package < o m O h * tfftr rtfm iii •c cont hF E @ V c e /1c fT Pd NPN NPN NPN PNP PNP SOT 3 2 SOT32 T063 T066 TO 3 60 80 100 55 60 4 4 29 4 12 750-15k 750-15k 20-100

MJE3055F

Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)

TIP31c PNP Transistor

Abstract: n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c
Contextual Info: PLASTIC POWER P L A S T IC PO W ER T R A N S IS T O R S E L E C T O R C H A R T TO-220 P A C K A G E lc 3 Am ps (TIP) lc 4 Am ps (BD) V CEO Volts NPN PNP 7 Am ps 5 Am ps NPN NPN PNP 2N6288 2N6111 PNP 30 7 Am ps NPN PNP 40 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42

radiator

Abstract: RCA1C09
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont'd h v C E O ( us) S V C E X V (sus) V FE V 'cEX-mA <C A V CE V Temp.-°C 25 V C £ (sat)-V •c A CE V >B A 2N5578 FAMILY (n-p-n) High Current, High Po - 0.4 MHz min; P j = 300 W max T 2N5575

JE2901

Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
Contextual Info: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5

mje13007

Contextual Info: O Power Transistors TO-220 Case TYPE NO. NPN PNP tc PD <A W) MAX BVCBO BVCEO @ ic hFE <V) 00 MIN MIN MIN MAX (A) VCE(SAT) @ 1C CO (A) MAX fr (MHz) MIN 2N5294 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80

radiator 0,019

Abstract: 2n5578
Contextual Info: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max