2N5927 JAN Search Results

D0307

Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Contextual Info: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory

2N5927

Contextual Info: NOTICE OF CANCELLATION INCH-POUND MIL-S-19500/440A ER NOTICE 3 13 January 2005 SUPERSEDING NOTICE 2 24 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N5927 JANTX AND JANTXV MIL-S-19500/440A(ER), dated 10 June 1991, is hereby canceled. Future acquisition for this material should refer to

2N5927

Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
Contextual Info: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .

2N5927 JAN

Contextual Info: BIG IDEAS IN PowerTech big po w er ” • 120 AMPERES JAN T X 2 N 5 9 2 7 P T - 700 P T - "702 SILICON NPN TRANSISTOR FEATURES: V c E s a t . V BE 0.75 V @ 70 A h p ^ . 5 min @ 120 A 1.5 V @ 70 A t j .

2N5927

Abstract: powertech 2N5927 JAN
Contextual Info: BIG IDEAS IN BIG POWER" • PowerTech 120 AMPERES JAN T X 2 N 5 9 2 7 PT- 7 0 0 PT- 7 0 2 SILICON IMPIM TRANSISTOR FEATURES: v CE sat 0.75 V @70 A V BE' 5 min @1 2 0 A FE ' 2.5 n see 1.5 V@ 70 A 1.2 A @ 100 V ■S/b 6 Joules : S /b’ SAFE OPERATING AREA

04029-01TX

Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing

Contextual Info: "ENGIDEAS IN BIG POWER" • PowerTech 120 A M P E R E S JAN T X 2 N 5 9 2 7 PT- 7 0 0 PT- 7 0 2 SILICON NPN TRANSISTOR FEATURES: U C E isatl . . 0 ,7 5 V . . 70 A t.S V S > 7 0 A bp 5 min @12 0 A

TO63 package

Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3

TO63 package

Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the