2N5682 ST Search Results

2N5682

Abstract: 2N5682 ST 2n5680 st 2N5680 2N568 2N5681
Contextual Info: 2N5681 2N5682 SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39

2N5682

Abstract: 2N5681 2N5680 2N568 2n5680 st
Contextual Info: 2N5681 2N5682  SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39

2N5682

Abstract: 2N5681 2N5680 2N5679 2N568
Contextual Info: 2N5681 2N5682 SILICON NPN TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39

2N5682

Contextual Info: 2N5681 2N5682 HIGH VOLTAGE NPN SILICON TRANSISTOR DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications.

JANS2N5154

Abstract: 23302 JANS2N5154L
Contextual Info: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L

2N5680

Abstract: 2N5679 2N5681 2N5682 PNP TO-39
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 Boca Semiconductor Corp. BSC 2N5681 2N5682

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

Contextual Info: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/ 583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage

2N5681

Abstract: 2N5682 SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Contextual Info: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

2N5682

Abstract: 2N5681 2H568
Contextual Info: £ Z T SGS-THOM SON 2N5681 SILICON NPN TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39

2N5680

Abstract: 2N5681 2N5682 2N5679 TO-39 CASE to ambient
Contextual Info: Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100

2N5680

Abstract: 2N5679 2N5682 2N5681
Contextual Info: DATA SHEET 2N5679 2N5681 2N5680 PNP 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages

2n5680

Abstract: 2n5680 motorola 2N5679 MOTOROLA
Contextual Info: 2N5415, 2N5416 For Specifications, See 2N3439 Data. 2N5581/82 For Specifications, See 2N2218.A Data. M A X IM U M RATINGS 2N5680 2N5682 Untt 120 Vdc 120 Vdc Symbol 2N5679 2N5681 Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Emitter-Base Voltage

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

2N5682

Abstract: 2n5680
Contextual Info: 2N5681 2N5682 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )

2N5679

Abstract: 2N5682 2N5680 2N5681
Contextual Info: 2N5681 2N5682 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )

Contextual Info: 2N5681 2N5682 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 2 .5 4 (0 .1 0 0 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 0 .6 6 (0 .0 2 6 )

NPN Transistor VCEO 80V 100V

Abstract: 2N5682 NPN Transistor 1A metal switching 2N5679 2N5680 2N5681
Contextual Info: 2N5681 2N5682 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )

Contextual Info: PNP NPN 2N5679 2N5681 2N5680 2N5682 LOW-POWER COMPLEMENTARY SILICON TRANSISTORS 1 AM PERE C O M P L E M E N T A R Y S IL IC O N P O W E R T R A N S IS T O R S 100-120 V O L T S 10 W A T T S .d e s ig n e d f o r u s e a s a d r i v e r f o r h i g h - p o w e r t r a n s i s t o r s in g e n e r a l - p u r p o s e

2N5682

Abstract: 2N5681 equivalent C-2688 MIL-PRF19500 2N5679 2N5681 JANTX2N5682 ST1113
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 21 November 1999. INCH-POUND MIL-PRF-19500/583A 21 August 1999 SUPERSEDING MIL-S-19500/583 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,

2N5680

Abstract: 2N5679 2N5681 2N5682 JAN2N5681
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 October 2010. * MIL-PRF-19500/583B 22 July 2010 SUPERSEDING MIL-PRF-19500/583A 21 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,

2N5416 MOTOROLA

Abstract: BSW68A 2N4236 MOTOROLA MM3007 2N3501 MOTOROLA BSS74 MOTOROLA MM4003 2N3114 IR M-5005 2N3495
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.