2N5530
Abstract: LC117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors 2N5529 Solitron Devices Solitron Transistor 2N5533
Contextual Info: 83£flßI^- S O L I T R O N DEVICES INC _ _ _ _ 6 6 C 01912 D T"1 3 3 - /f _ I^ SätD aD D D M ia t I ßflQ ifljH jfl KtSlSlAN T NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES FEATURES
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2n55292n55302n55332n5534+75x1014lc117solitronnpn transistor 10a 24vsolitron transistorssolitron devicessolitron transistor
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BA101D
Abstract: J04075 sars0 S0146 2N5529 2N6482 B40-12A SGSIF464 TIP542 acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC3748 BOlllA BOlllA 2N5327 SFT6200 (A) 2N5328 SMl2168 BU100A ~~~~~-O5 25 30 SVT250-05 SVT250-05 SVT300-05 SVT300-05 SVT300-05 S01457 2S01443 2S01445 2SD~:5A 35 40 TIP543 TIP543 2N5940 2N5939 TIP542
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sgsif464sgsf464sgsf564blw78+14s012902n60932n5304bol13sml2171ba101dj04075sars0s01462n55292n6482b40-12atip542acrian inc
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3852r
Abstract: 2N5530 2N5529 SOLITRON 10MHZ BR100E BR100F BR101E BR101F
Contextual Info: _8 3 6 8 6 0 2 S O L I T R O N D E V I C E S _ üb INC 66C 0 1 9 3 0 D ’T ' 3 3 - l l _ _ RADIATION RESISTANT NrN S/UÜÜN POWER TRANSISTORS DE|fl3 bfl bQ g fi I ' " ' Ir BR100E BR100F* BR101E BR101F* NPN SILICON POWER TRANSISTORS
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33-il_br100ebr100fbr101e+8br101f3x10l4n/cm2t0-61/i3852r2n55302n5529solitron10mhz
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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9300
Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
Contextual Info: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30
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2n50042n50052n50082n5009+132n50382n50392n50772n50852n51492n515093002n55612n53302n37292n40252n65619301
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3852r
Abstract: 2N5529 BR101C 2n5530 bR100C
Contextual Info: bbC D | fl3t.0t.DE GGDnEfl □ 66C T ' 01928 3 3 n - RADIATION RESISTANT NPN SILICON POWER TRANSISTORS S0LITR0N DEVICES I NC BR100C BR101C NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES FEATURES HIGH POWER RADIATION EXPOSURE LEVEL TO 3x1 14n/Cm 2
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br100cbr101c14n/cmo-111+510mhz2n55292n55302n55333852r
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