3852r
Abstract: 2N5530 2N5529 SOLITRON 10MHZ BR100E BR100F BR101E BR101F
Contextual Info: _8 3 6 8 6 0 2 S O L I T R O N D E V I C E S _ üb INC 66C 0 1 9 3 0 D ’T ' 3 3 - l l _ _ RADIATION RESISTANT NrN S/UÜÜN POWER TRANSISTORS DE|fl3 bfl bQ g fi I ' " ' Ir BR100E BR100F* BR101E BR101F* NPN SILICON POWER TRANSISTORS
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33-il_br100ebr100fbr101e+8br101f3x10l4n/cm2t0-61/i3852r2n55302n5529solitron10mhz
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2N5417
Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bd265bd265abd265by220b+13bd265lbd266lbd267l2n5417a 14uud30082n5292bd263bd264aci44transistor t05bc412kis434
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PNP transistor A705
Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110bd265bd265abd265b+13y220bbd265lbd266lbd267lpnp transistor a7052n16202sc7682n1619ud3008bd264mht6414sot1156mht6311
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BC507
Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bd265bd265abd265by220b+13bd265lbd266lbd267lbc507l18b5.1 channel producing icbc180bc507 transistortis107me60pet1075pet1075apet6003
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2n1620
Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E
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2n16202n1958oms 4502n1617/i+32n16192sc114sot1156
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BF125
Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bd265bd265abd265by220b+13bd265lbd266lbd267lbf125pet8002l18bgw 9nbfw74bfw75bfw76bfx53t046ml101a
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2SD45
Abstract: SOT1156 2sc768 2N1210-1 2N1619 2N1620 SDT1152 MHT6311 MHT6312 MHT6313
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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npn110sdt1156sdt1157400ms+15sdt1158sdt1159400mlsdt1160sdt11612sd45sot11562sc7682n1210-12n16192n1620sdt1152mht6311mht6312mht6313
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Y220b
Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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bd265bd265abd265by220b+11bd265lbd266lbd267l2n3836bd264bd263bd264ans9726ud30082n38372n5417
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2N1620
Abstract: 2N1619 2SC5220 SDT1152 SOT1156
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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2n16202n16192sc5220sdt1152+1sot1156
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tea 1601 t
Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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tea 1601 tl18bpt23tea 1601+3ud30082n2719me2001
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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bd264tip27bd109s1050+6bd263bd264ably88bly92s708transistor bd400
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028A5
Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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028a5bd264mt27 package2sc5220+52sc5240b3539bly95msp90ta2084
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80 amp 30v npn darlington
Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110bd265bd265abd265b+13y220bbd265lbd266lbd267l80 amp 30v npn darlingtonud3008transistor 2sc115bd107aa515b3570b3571bd106hfe-10
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2SC736
Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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npn110bd265bd265abd265b+13y220bbd265lbd266lbd267l2sc736bly25bly26cp4302n5276ta-d93ml101btab101ns9726
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2SC631
Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bd265bd265abd265by220b+13bd265lbd266lbd267l2sc6312sc632fv9182n1082transistor 2sc632bcy502n7481a6082sc402aml102b
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BD264A
Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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bd264a2n38362n5417bd263+3bsx86ml101bsc1625
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Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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