2N5339 JANTX Search Results

2N5339 JAN

Abstract: 2N5339 Diode NPN 200 VOLTS POWER TRANSISTOR 2N5339 2N5339J 2N5339JV 2N5339JX
Contextual Info: 2N5339 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5339J

2N5339

Contextual Info: TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 Devices Qualified Level 2N5339 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

2N5339JAN

Abstract: Bipolar Transistors
Contextual Info: Back to Bipolar Power Transistors TECHNICAL DATA MIL-PRF 2N5339 JANTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/560 NPN POWER SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

Contextual Info: NPN Power Silicon Transistor 2N5339 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 • TO-39 TO-205AD Package Maximum Ratings Ratings Symbol Value Units 100 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage

2n5339 jantx

Abstract: 2N5339 20VDC 0011 TRANSISTOR 276AA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JAN JANTX

2N5339 JANS

Abstract: 2n5339
Contextual Info: NPN Power Silicon Transistor 2N5339 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 • TO-39 TO-205AD Package Maximum Ratings Ratings Symbol Value Units 100 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage

Contextual Info: NPN Power Silicon Transistor 2N5339 Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/560 • TO-39 (TO-205AD) Package Maximum Ratings Ratings Symbol Value Units 100 Vdc Collector - Base Voltage VCEO

2N5339

Abstract: 2N5339JANTX
Contextual Info: TECHNICAL DATA MIL-PRF 2N5339 JANTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/560 NPN POWER SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 250C 1

Contextual Info: NPN Power Silicon Transistor 2N5339 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 • TO-39 TO-205AD Package Maximum Ratings Ratings Symbol Value Units 100 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage

NPN 200 VOLTS POWER TRANSISTOR

Abstract: 2N5339 JAN 2N5339
Contextual Info: 2N5339 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5339J

2N3507 JANTX

Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
Contextual Info: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C

2N5339

Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53
Contextual Info: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —

Contextual Info: 2N5339+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)6.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5339+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)6.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

TRANSISTOR SMD MARKING CODE 451

Abstract: 2N6193 2N5339
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. INCH-POUND MIL-PRF-19500/560E 6 March 2002 SUPERSEDING MIL-PRF-19500/560D 3 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

2n6190

Contextual Info: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S VOLTS T0-205 1*0-5 111I PEAK *C AMPS min/max hFE LU bvceo O > > DEVICE TYPE _o < PACKAGE VCE (sat) max VOLTS !C @ *B A A 2N3439* 350 1.0 40-160 .02/ 10.0 0.5 .05 /. 004 2N3440* 250 1.0 40-160 .02/ 10.0

Contextual Info: BIPOLAR NPN PLAN AR POW ER T R A N SIST O R S PACKAGE T0-205 TO-5 4 J1I DEVICE TYPE b v CEO VOLTS PEAK !C AMPS hFE min/max 'C @ VCE A V VCE (sat) max VOLTS •c @ 'b A A 2N3439* 350 1.0 40-160 .02/10.0 0.5 .05/.004 2N3440* 250 1.0 40-160 .02/10.0 0.5 .05/.004

Contextual Info: tt < mà o & PACKAGE TO-204 TO-3 D E V IC I TYPE BV«0 VO LTS 'C AM PS 2N5741 60 20.0 20-80 10.0/5.0 1.5 10.0/1.0 2N5742 100 20.0 20-80 10.0/5.0 1.5 10.0/1.0 2N6246 60 15.0 20-100 7.0/5.0 2.5 15.0/1.5 2N6247 80 15.0 20-100 6.0/5.0 3.5 15.0/1.5 k @ VC! hf l

Contextual Info: 2N6190 2N6191 2N6192 2N6193* hnasr *n Iso availabc as JAN, JANTX, JANTXV 5 AMPERE M E D IU M POWER PNP S ILIC O N TRANSISTO RS . , . designed for switching and wide band amplifier applications. • Low Collector-Emitter Saturation Voltage — VcE(sat = 1-2 Vdc (Max) @ I q = 5.0 Amp

2n533

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON SWITCHING TRANSISTOR

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON SWITCHING TRANSISTOR

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0