2N519 Search Results

2N5190

Abstract: 2N5193 2n5195 2N5194
Contextual Info: Inchange Semiconductor Product Specification 2N5193 2N5194 2N5195 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N5190/5191/5192 ・Excellent safe operating area APPLICATIONS ・For use in medium power linear and

2n5191 jan

Abstract: 2N5191
Contextual Info: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ s ct Linear and switching industrial equipment u d o Description r P e The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

fet 2n5199

Abstract: 2N5196 2N5198 2N5199 2NS197
Contextual Info: 2N5199 2N5198 2N5197 2N5196 monolithic dual n-channel JFETs designed fo r B S ilic o n ix Performance Curves NNP See Section 5 . B EN EF IT S • Minimum System Error and Calibration 5 mV Maximum Offset 2N5196, 97 • Low Drift 5 t iV r C Maximum (2N5196)

C 5074 transistor

Abstract: 2N5195 2N5192 NPN POWER TRANSISTOR SOT-32 c 5074
Contextual Info: 2N5195 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description 3 The device is manufactured in planar technology with “base island” layout. The resulting transistor

Siliconix JFET Duals

Abstract: 2N5196 C 5198 2N5197 2N5198 2N5199 JFET DUALS
Contextual Info: 2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5196 –0.7 to –4 –50 1 –15 5 2N5197 –0.7 to –4 –50 1 –15 5 2N5198

2N5192 MOTOROLA

Abstract: 2N5194 2N5191 2N5192 2N5193 2N5195 2N5195 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195 * Silicon PNP Power Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2N5190

Abstract: 2N5190 equivalent pin details of 2N5190
Contextual Info: 2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. • ESD Ratings: Machine Model, C; > 400 V • • http://onsemi.com Human Body Model, 3B; > 8000 V

2N5192

Abstract: PNP POWER TRANSISTOR "SOT-32" NPN POWER TRANSISTOR SOT-32 2N5191 0016114E 2N5195 JESD97 SOT 32 SOT32 PNP POWER TRANSISTOR SOT-32
Contextual Info: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

2N5195

Abstract: 2N5191 2N5192 2N5194 2N5194G 2N5195G
Contextual Info: 2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. Features • Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2N5191

Abstract: 2N5192
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package EC B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS

2N5478

Contextual Info: SEMELAB LTD • ai33ia? . .-' _ ISMLB 0000DE1 T~ 3 3 -¿ / ^ Reliability Polarity Option Package O ■type No. < o m '“«¿Sslssiia, *c cont hFE@ VCE/'C «T Pd | r 2N5190 2N5191 2N5192 2N5193 2N5194 NPN NPN NPN PNP PNP 40 60 80 40 60 4 4 4 4 4 25-100 25-100

2N5196

Abstract: u421s
Contextual Info: 2N5196 SERIES N-Channel JFET Pairs The 2N 5196 S e rie s of m onolithic J F E T p airs C T S iic o n ix in c o r p o ra te d is >G M AX V 9 ft M IN (m S ) (P A ) |Vg S 1"V GS2| M AX <mV) 2N 5196 -50 1 -1 5 5 2N 5197 -5 0 1 -1 5 5 2N 5198 -5 0 1 -1 5 10 2N 5199

Siliconix JFET Duals

Abstract: 2N5198
Contextual Info: Tem ic 2N5196/5197/5198/5199 Siliconix Monolithic N-Channel JFET Duals Product Summary P a rt N um ber VGS ofl (V) V(BR)GSS M in (V) gb M in (m S) I g M ax (pA) IVg s i - v GS2l M ax (mV) 2N5196 - 0 .7 to - 4 -5 0 1 -1 5 5 2N5197 -0 .7 to - 4 -5 0 1 -1 5

N519

Abstract: 2N5191 2N5192 2N5193 2N5194 2N5194G 2N5195 2N5195G Power Transistors TO-225aa Case
Contextual Info: 2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features • Pb−Free Packages are Available*

Motorola transistors 2N5192

Abstract: 2N5191-D 2n5191 Transistor 2n5191
Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N5i9i/D Silicon NPN Pow er Transistors 'M o to ro la Preferred Device . . . for use in power am plifier and switching circuits, — excellent safe area limits. Complem ent to PNP 2N5194, 2N5195.

2N5192

Abstract: 2N5191 2N5195
Contextual Info: 2N5191 2N5192 MEDIUM POWER NPN SILICON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32

to126 case

Abstract: Power Transistors TO-126 Case 2N5195 2N5193 2N5190 2N5194
Contextual Info: Central 2N5193 2N5194 2N5195 PNP SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5193 Series types are Silicon PNP Power Transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications.

2N5192G

Contextual Info: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS

TO126

Abstract: 2N5191 2N5192 to126 pin out Power Transistors TO-126 Case 340
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package EC B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package EC B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N5196

Abstract: 2N5196-9 2N5198 2N5199 2N5199CHP 2N5545-47 2NS197 U231-35 FET package TO-71
Contextual Info: 2N 5199 2N5198 2N5197 2N5196 B monolithic dual n-channel JFETs designed fo r Siliconix Perform ance Curves N N P See Section 5 . BENEFITS • Minimum System Error and Calibration 5 mV Maximum Offset 2N5196, 97 • Low Drift 5 t iV r C Maximum (2N5196)

MJE5190

Abstract: 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195
Contextual Info: ON Semiconductort 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN

BU108

Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS

2N5196

Abstract: 5546 Siliconix JFET Duals 2N5199 40 v 20 amp, diode c 5198 Dual N-Channel JFET Transistor C 5198 jfet differential transistor 2N5197
Contextual Info: 2N5196/5197/5198/5199 Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5196 –0.7 to –4 –50 1 –15 5 2N5197 –0.7 to –4 –50 1 –15 5 2N5198 –0.7 to –4 –50 1 –15 10 2N5199 –0.7 to –4