2N5179 CHIP Search Results

PN3563 equivalent

Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
Contextual Info: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å

ny transistor

Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90
Contextual Info: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS

MRF559

Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB

1N4148

Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607
Contextual Info: MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability

MRF553G

Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics

MRF559

Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package

MRF559

Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability

mrf559 v

Abstract: MRf559 mrf555
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB

2N5179

Abstract: MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

bead

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics

MRF555T

Abstract: MRF559 2N5109 BFR90 transistor BFR96 mrf559 v mrf5812 equivalent transistor bfr96 2N3866A 2N4427
Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package

mrf555

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

MRF559

Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability

2n2857

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

Contextual Info: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA

MRF581A

Abstract: MRF581 vk200* FERROXCUBE
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

MRF581

Abstract: MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 MSC1318
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

MRF581A

Abstract: vk200* FERROXCUBE mrf581 s-parameter 2N4427 2N4427 MRF4427 MRF553 MRF607 C1 macro-X
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

vk200* FERROXCUBE

Abstract: MRF581
Contextual Info: MRF581 MRF581G MRF581A MRF581AG RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA

A008B

Abstract: 2N4033 A006D 2N3338
Contextual Info: I 15E D | û 3 b L D H 0002143 SOLID STATE DEVICES INC T'T>-C! t # Geometry Popular Part Numb er s TRANSISTORS, B008G B008H B008W B 0 08 V Geo me tr y Popular Part Numbers A 00 64 A006B A006A A 006C A0066 A 00 6D A0065 A008B A008C AÖ08D • Geo me tr y RAD*

2N3053 equivalent

Abstract: list of n channel power mosfet barcode reader circuit 5490 motorola MICROSEMI 2N2222A transistor motorola 2n3053 2n5179 equivalent rfid passive tag architecture and standards equivalent 2N2907A 2N2102* motorola
Contextual Info: Winter 2000 NOW Products Protecting Transient Protection Product Guide Microsemi has developed a program to communicate its more popular transient suppression products to our customers on a more frequent basis. Starting in late 1999 Microsemi started shipping a quarterly Transient

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

HP5082-2835

Abstract: HP50822835 hp5082 B1B11 step 7 micro win MP7685KD ic cmos 4090 MP7685 mpop02
Contextual Info: M EOE b O ci 7 4 l4 4 D MICRO POWER SYSTEMS S CMOS 11-Bit Monolithic A/D Flash Converter M IC R O POWER SYSTEMS FEATURES • • • • 0DG3SbS MP7685 IN C PIN CONFIGURATION 11-BIT RESOLUTION 1 MHz Sampling Rate Single Supply Voltage 3 to 6.5V Low Power CMOS (100 mW max.)