2N507 Search Results

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

BY1-1F

Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN
Contextual Info: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

2N5070

Abstract: 2N507
Contextual Info: 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High PACKAGE STYLE TO- 60 Power Linear Amplifier Application in the 2.0 to 75 MHz Range. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC

2N2880

Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
Contextual Info: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B

equivalent transistor n 4212

Abstract: Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 CF-111 ferrite core TA2827 indiana general TRANSISTOR J 4310 EQUIVALENT CF-111
Contextual Info: File No. 269 RF Power T ran sisto rs Solid State Division 2N5071 2 4 -W C W , 76-MHz Em itterBallasted O verlay Transistor Silicon N-P-N Device fo r 2 4 -V o lt A p p lica tio n s in V H F C o m m un icatio ns E q u ip m en t Features: • F o r class B o r class C a m p lifie rs

2N5672 solitron

Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
Contextual Info: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B

2N5070

Abstract: RCA-2N5070 2N5070 equivalent rca 2N5070 IB77 Single-Sideband overlay transistor 1156N VK200 rca transistor
Contextual Info: File No. 268 RF P o w er T ransisto rs Solid State Division 2N5070 Silicon N -P -N Overlay Transistor For High-Frequency Single-Sideband Communications Equipment Features: • Suitable lo r class A or class B amplifiers ■ 25 W PEP ou tput min. at 30 MHz w ith

BY1-1F

Abstract: A15-12 A1512 S175-50 BAM40 BY1-1 BY17 S100-12 S100-28 S15-28
Contextual Info: BH AR AT ELEK/SEP1IC0ND DI 47E D • 1 4 3 5 3 ^ 0 OO DD Ol ? 375 ■ BELI T " 3 3 - Ô / RF DEVICES H.F. 2 -3 0 MHz Type Polarity S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* * S30-12*y S50-12* S100-12* S1 75-28* * S1 75-50 A’ * NPN NPN NPN NPN NPN NPN

SDT423

Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
Contextual Info: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664

Contextual Info: 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: 2N5070 is Designed for High Power Linear Amplifier Application in the 2.0 to 75 MHz Range. nruE 'ro-eo

2N5075

Contextual Info: 0043592 A P I ELECTRONICS INC A P I ELECTRONICS INC 26C 00224 D T-33-0\ 00435^2 0000554 3 5b CO L L EC T O R CURRENT = 5 AM PS N PN TY PE S - CONTINUED D evice No C a se 2N5002 2N5075 TO111/1 TO111/1 T O -3 T O -3 T O -3 TO111/1 TO- 2N5076 TO- VCBO V olts

2N5070

Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
Contextual Info: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

SDT423

Contextual Info: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A

Contextual Info: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30