2N5038 SOL Search Results

2n5038

Abstract: FO152
Contextual Info: 3875081 G E SOLID STATE ^ ^ 1 3875081 0017117 3 I"> T - i W Ï High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors

RCA-2N5038

Abstract: 2N5038 equivalent 2N6496 2N6496 RCA 2N5039-1 AALI 2N5038 2N5039 2n5038 sol
Contextual Info: 3875081 G E SOLID S T A T E ^ ^ | 3ö7SDai 0017117 3 ^r . S 3 ^ /3 High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors

TO-204AA

Abstract: 2N5038G 1N4933 2N5038
Contextual Info: 2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com

MJ2955 replacement

Abstract: BU108 2SA1046 MJE172 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in

Contextual Info: 2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com

1N4933

Abstract: 2N5038 2N5038G
Contextual Info: 2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features •ăHigh Speed - tf = 0.5 ms Max

2N9038

Abstract: 2N5039 2N503S 2N903 2N5038 JANTX 2N5039 2N5039 JANTX JANTX 2N5038
Contextual Info: JAN, JANTX, JANTXV 2N5038 JAN, JANTX, JANTXV 2N5039 POWER TRANSISTORS 20 Amp, 150V, Double Diffused NPN Mesa FEATU RES • • • • • DESCRIPTION These M IL approved double diffused glass passivated mesa power transistors com bine fast-switching, low saturation

U3540

Abstract: 2n5039
Contextual Info: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications

2N5672 solitron

Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
Contextual Info: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B

TIC 2260

Abstract: si5464 RF Transistor 2n5038
Contextual Info: 2N5038, 2N5039, 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors D evices for S w itchin g and A m p lifie r C ircuits in Industrial and C o m m ercial A p p licatio n s Features: • ■ ■ ■ M axim um operating area curves for dc and pulse operation

2N5038 JANS

Abstract: 2N5038 2N5039 qci sample 2N5039 JANS MIL-PRF19500
Contextual Info: INCH-POUND MIL-PRF-19500/439F 18 August 2005 SUPERSEDING MIL-PRF-19500/439E 23 February 2001 The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 November 2005. * PERFORMANCE SPECIFICATION SHEET

TU201

Abstract: 2N5004 2N5005 Solitron Devices TU115-B01 S2N4150 S2N2658 S2N2880-1 S2N3749 S2N3749-1
Contextual Info: _ 6 3 6 8 6 0 2 SOL I TRON DEVICES INC_ 95D 0 2 784 D T » *3 ^ - q / S0 LITR0 N DEVICES INC T5 DEI fl3 t.flbDa □0 DE7 Û4 h [ p ia » © ’!!’ © A T M ,© _ ^ r n E C F B E S S P A C E FLIGHT POW ER TRANSISTORS

TRANSISTOR C 6090 npn

Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Contextual Info: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design

KT8278

Abstract: KT827V SK3561 sd333 KT827
Contextual Info: POWER SILICON NPN Item Number Part Number I C -5 -10 15 - 20 25 30 ~~~~~~1 2N5039 2N5537 2N5538 S2N5539-8 SML8003 SML8013 SML8016 SML8071 SPC163-08 163-08A 163-08SPC 163-08 163-08 2N5303 807458 807458 ~¥~:~: 35 40 STC1726 2N4211 SOT8013 SOT8013 SOT8013 SOT8157

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include

MJE340-MJE350

Abstract: 2SD71 2sc106 BD139.6 BU108 2SC1419 BD139.16 BD139.10 mj3055a MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE270 PNP MJE271 Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit SLIC . • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126

BU108

Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc

RCA 40250

Abstract: RCA 40250 transistor 2N3055 ST rca 2n6254 Transistor 40347 transistor RCA 528 st bux RCA 528 40250 RCA 2N6259 RCA
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

norton amplifier

Abstract: LM3900 VCO high end amplifier schematics operational amplifier discrete schematic LM359 IC LM331 jfet cascode LM331 common base amplifier circuit designing norton op. amp
Contextual Info: WHY ANOTHER NORTON AMPLIFIER? The current differencing Norton amplifier has been widely applied over the last 5 years because of the versatility and availability of quad Norton amplifiers the LM3900 . These low cost quads are found today in a wide variety of analog

ic 7490

Abstract: internal structure of 7490 IC function of ic 7490 ci 7490 of 7490 IC Datasheet of 7490 IC of IC 7490 DIGITAL IC 7490 7490 application of 7490
Contextual Info: National Semiconductor Application Note 278 Timothy T Regan September 1981 WHY ANOTHER NORTON AMPLIFIER The current differencing Norton amplifier has been widely applied over the last 5 years because of the versatility and availability of quad Norton amplifiers the LM3900 These

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS