2N3958 EQUIVALENT Search Results

2N3958 equivalent

Abstract: Dual N-Channel JFET 2N3958
Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current

Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current

2N3958 equivalent

Abstract: 2N3958
Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current

2N3958

Abstract: SST401 DG 7-32
Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY Vgs oH (V) V (BR)GSS -1 .0 to -4 .5 Min (V) gfs Min (mS) lG Max (pA) |VGsi - VGS2] Max (mV) -5 0 25 1 -5 0 FEATURES BENEFITS APPLICATIONS • Monolithic Design • Tight Differential Match vs. Current

2N3958

Contextual Info: 2N3958 Siliconix Monolithic NĆChannel JFET Dual Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 - VGS2j Max (mV) -1.0 to -4.5 -50 1 -50 25 Features Benefits Applications D D D D D D D D D D D D D Wideband Differential Amps D HighĆSpeed,TempĆCompensated,

2N3958 equivalent

Contextual Info: 2N3958 Monolithic N-Channel JFET Dual Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 Features Benefits Applications D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time

2N3958 equivalent

Abstract: 2N3958 2N5196 2N5199
Contextual Info: 2N3958 Monolithic N-Channel JFET Dual Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 Features Benefits Applications D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time

2n3958

Abstract: 2N3958 equivalent
Contextual Info: Tem ic 2N3958 Se m i c o n d u c t o r s Monolithic N-Channel JFET Dual Product Summary V g s <o i d V V(BR)GSS - 1 .0 to -4 .5 Min 0 0 -5 0 gfs Min (mS) l 1g Max (pA) IV g s i-V g m I -5 0 Max ( m V ) 25 Features Benefits Applications • • • •

2N3958

Abstract: 2N3958 equivalent
Contextual Info: T em ic 2N3958_ Siliconix Monolithic N-Channel JFET Dual Product Summary V g s WD w V BR GSS M in (V) gfe M in (m S) I g M a x (p A ) IVg s i - VGS2I M ax (mV) -5 0 1 -5 0 25 - 1 .0 to -4 .5 Features Benefits • • • • • • • •

2N3956

Abstract: 2N3958 equivalent 2N3957 TO71 package Siliconix JFET Pairs
Contextual Info: SILICONIX INC Ô2S473S 0013015 b 1ÖE D fX S ilic o n ix 2N3956 SERIES JL M N-Channel JFET Pairs “T-ZT7-2-7 The 2N3956 Series are monolithic designed for high performance amplification. JFET pairs differential PART NUMBER This series features tight matching,

J555

Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj

ultra low igss pA

Abstract: ultra low igss pA mosfet n channel
Contextual Info: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated

2sk170 spice

Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
Contextual Info: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

FET U310

Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW

jfet transistor 2n4391

Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
Contextual Info: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

TO72 package n-channel jfet

Abstract: 2N5019 "direct replacement" 2n4416 transistor spice SST4500 Ultra High Input Impedance N-Channel JFET Amplifier J201 Replacement 2n4416 transistor die n-channel JFET sot23-6 JFET power transistor 2n3956 equivalent transistor
Contextual Info: 2N/SST4416 2N4416A N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER Linear Integrated Systems FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE 400 MHz 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min) 1 2N SERIES ABSOLUTE MAXIMUM RATINGS

P-Channel MOSFET 12V SOT 23

Abstract: LS-31 ultra FAST DMOS FET Switches jfet to 92
Contextual Info: J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated J SERIES SST SERIES TO-92

low noise dual P-Channel JFET

Abstract: transistor TO99 package 2N5116 LS312 equivalent 2N4416 equivalent p-channel dual P-Channel JFET 2n5114 sot23
Contextual Info: 2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

ultra low igss pA mosfet

Abstract: J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor
Contextual Info: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW GATE LEAKAGE IG = 15pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to +150 °C

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

4392 mosfet

Abstract: MOSfet 4392 dual P-Channel JFET sot23 P-Channel MOSFET 2N jfet to 92 SST113 j174 EQUIVALENT transistor U402
Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

J201 Replacement

Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS