2N3421A Search Results
2N3421A Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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2N3421A |
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Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 | Original | 10.79KB | 1 | ||
2N3421A | Zetex Semiconductors | Quick Reference Guide (Discrete Semiconductors) 1991 | Scan | 39.13KB | 1 | ||
2N3421ASMD |
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Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications | Original | 10.1KB | 1 | ||
2N3421ASMD05 |
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Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications | Original | 10.87KB | 1 |
2N3421A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) |
Original |
2N3421A O205AD) 17-Jul-02 | |
2N3421ASMD05Contextual Info: 2N3421ASMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount |
Original |
2N3421ASMD05 O276AA) 15-Aug-02 2N3421ASMD05 | |
2N3421AContextual Info: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) |
Original |
2N3421A O205AD) 1-Aug-02 2N3421A | |
Contextual Info: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) |
Original |
2N3421A O205AD) 19-Jun-02 | |
2N3421ASMDContextual Info: 2N3421ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed |
Original |
2N3421ASMD O276AB) 15-Aug-02 2N3421ASMD | |
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A) |
OCR Scan |
O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 | |
2N3440AContextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5 |
OCR Scan |
O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3440A | |
transistor T43Contextual Info: 5L.E D • tn7QS7fl 0007004 T43 ■ Z E T B NPN HIGH CURRENT SWITCHING "r - 3 S “- o < TABLE 12 - NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors show n in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. |
OCR Scan |
BUY92 BUY91 BUY90 BUY82 BUY81 BUY80 transistor T43 | |
pic 08m
Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
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OCR Scan |
2N3053SM 2N3054 2N3055 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E pic 08m 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411 | |
Contextual Info: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY DE | 7 2 2 0 S 3 3 □004^54 0 95D 04954 SEMICOND/DISCRETE -r-sr-/7 SWITCHING TABLE 6 - N P N SILICO N PLANAR HIGH CURRENT SW ITCHING T R A N SIST O R S The transistors shown in this table are designed for high current, high dissipation switching applications |
OCR Scan |
BUY82 BUY81 BUY92 BUY91 2N4037 BUY90 2N4036 TP-39 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN | |
2n3054 pnp
Abstract: TO77 package 2N3411
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Original |
html/2N3054 2N3054" 2N3054 2N3054A 2N3054-JQR-B 2N3250" 2N3250 40MHz 2n3054 pnp TO77 package 2N3411 | |
3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
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OCR Scan |
FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 | |
Contextual Info: NPN HIGH CURRENT SWITCHING TABLE 12 - NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The tran sisto rs sh o w n in th is table are designed fo r high cu rre n t, high dissipation s w itc h in g a pplications in Industrial and M ilita ry equipm ents. |
OCR Scan |
BUY82 BUY81nsistors. BUY81 BUY80 BUY91 BUY90 | |
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