2N3019 AND APPLICATIONS Search Results

2N3019

Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Contextual Info: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation

2N3019

Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201
Contextual Info: NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.

2n3019 equivalent

Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Contextual Info: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and

pnp for 2n3019

Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
Contextual Info: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.

pnp for 2n3019

Contextual Info: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.

Contextual Info: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC

2N4033

Contextual Info: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.

Contextual Info: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax­ ial NPN transistors in Jedec TO-39 metal case, de­ signed for high-current, high-frequency amplifier

2N3019

Contextual Info: Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • Amplifier and switching circuits.

2N3019

Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2n3019

Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

JANSL 2N3019S

Abstract: JANS2N3700UB 2n3019 equivalent
Contextual Info: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for

2n3019

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications

2N3019 CDIL

Abstract: 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed For Use in General Purpose Amplifier And High Speed Switching Applications.

2n3019 equivalent

Abstract: 2N3019
Contextual Info: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for

2N3019 DIE

Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2N3019 CDIL

Abstract: 2N3019 2N3020 power transistor 2n3020
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage

Contextual Info: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

TRANSISTOR 3064

Abstract: TRANSISTOR 2N3019 2N3019
Contextual Info: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N3019 and applications

Abstract: 2N3019S 2n3019 JANTX2N3700 jantx2n3019
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

2N3019

Abstract: JAN2N3700 2N3019S 2N3019S JAN
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

2N3019

Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

Contextual Info: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage