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    2N2P Datasheets (1)

    Mini-Circuits
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N2PD2-50
    		Mini-Circuits Super wide-bandwidth Power Splitter Original PDF 564.97KB 4
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    Amphenol Sine Systems RTS6BS12N2P03

    Plug 4 (2+2) Position Male Shell Size 12 with Silicone Seal
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    Master Electronics RTS6BS12N2P03 100
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    Newark RTS6BS12N2P03 Bulk 47 1
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    RS RTS6BS12N2P03 Bulk 50 3 Weeks 1
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    Interstate Connecting Components RTS6BS12N2P03
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    Bourns Inc CE1005Q-2N2P

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    Newark CE1005Q-2N2P Cut Tape 7,300 10
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    Amphenol Sine Systems FLS012N2PHEC03

    Receptacle - Square Flange - 4 (2+2) Position - Male - Shell Size 12 - Silicone Seal and End Cap with Individual Wire Sealing - Auto-Lock
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    Amphenol Sine Systems RTS012N2P03

    Receptacle Square Flange 4 (2+2) Position Male Shell Size 12 with Silicone Seal
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    Interstate Connecting Components RTS012N2P03
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    Amphenol Sine Systems RTS012N2PHEC03

    Receptacle Square Flange 4 (2+2) Position Male Shell Size 12 Silicone Seal and End Cap with Individual Wire Sealing
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    Master Electronics RTS012N2PHEC03
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    Newark RTS012N2PHEC03 Bulk 99 1
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    RS RTS012N2PHEC03 Bulk 20 Weeks 200
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    Interstate Connecting Components RTS012N2PHEC03
    • 1 $13.10
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    2N2P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    IRHG6110

    Abstract: IRHG63110 MO-036AB
    Contextual Info: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω


    Original     		93783eirhg6110mo-036abirhg63110+3mil-std-750mll-std-750267mh PDF

    IRHQ563110

    Abstract: IRHQ567110
    Contextual Info: PD - 94057 IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		irhq567110lcc-28irhq563110mil-std-750+2mll-std-750-100v PDF

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		4246airhg567110mo-036abirhg563110+12o-254aa22jgq045scvirf5n5210scirhna57064scsirhm597260irf5n5210irhna597160scsirhf7110scsirhg57110irhna57264sescs35clq045scs12clq150scs PDF

    Contextual Info: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω


    Original     		93783eirhg6110mo-036abirhg63110+3mil-std-750mll-std-750267mh PDF

    2n7633

    Abstract: IRF N-Channel Power MOSFETs IRHLA7630Z4 IRHLA7670Z4 2N763
    Contextual Info: PD-97251 2N7633M2 IRHLA7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE 14-LEAD FLAT PACK Product Summary Part Number Radiation Level IRHLA7670Z4 100K Rads (Si) IRHLA7630Z4 300K Rads (Si) RDS(on) ID


    Original     		pd-972512n7633m2irhla7670z414-lead+6irhla7630z4166mh-161a/2n7633irf n-channel power mosfets2n763 PDF

    Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω


    Original     		pd-91781cirhq6110lcc-28irhq63110+2mil-std-75080volt PDF

    IRHQ563110

    Abstract: IRHQ567110
    Contextual Info: PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		94057birhq567110lcc-28irhq563110+3mil-std-750mll-std-750-100v PDF

    Contextual Info: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International


    Original     		pd-90436girfg6110jantx2n7336jantxv2n7336+4mil-prf-19500/598mo-036ab266mh-75a/ PDF

    IRHG563110

    Abstract: IRHG567110 MO-036AB
    Contextual Info: PD - 94246B IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		94246birhg567110mo-036abirhg563110+3mil-std-750mll-std-750430mh PDF

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: IRHG6110 IRHG63110 MO-036AB
    Contextual Info: PD - 93783A IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω


    Original     		3783airhg6110mo-036abirhg63110+2and52-7105irf p channel mosfet 10a 100v PDF

    2N763

    Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)


    Original     		pd-97191b2n7635m1irhlg7670z4mo-036ab+4irhlg7630z4mll-std-750-164a/2n763 PDF

    Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω


    Original     		pd-91781cirhq6110lcc-28irhq63110+380voltmll-std-750-100v PDF

    Contextual Info: PRELIMINARY PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on)


    Original     		pd-97191b2n7635m1irhlg7670z4mo-036ab+3irhlg7630z4mll-std-750-164a/ PDF

    Contextual Info: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		pd-94057cirhq567110lcc-28irhq563110+3-100vmil-std-750mll-std-750 PDF

    Contextual Info: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		91664birfg5210mo-036ab276mh+2475mh-200v PDF

    Contextual Info: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		90437dmo-036abirfg5110150mh+1-100v PDF

    MO-03

    Contextual Info: PD-97191A 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω


    Original     		pd-97191a2n7635m1irhlg7670z4mo-036ab+4irhlg7630z4mll-std-750-164a/mo-03 PDF

    IRHG563110

    Abstract: IRHG567110 MO-036AB
    Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		4246airhg567110mo-036abirhg563110+3mil-std-750mll-std-750430mh PDF

    IRHLG7630Z4

    Abstract: IRHLG7670Z4 MO-036AB
    Contextual Info: PD-97191 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID CHANNEL 0.6Ω 1.25Ω


    Original     		pd-97191irhlg7670z4mo-036abirhlg7630z4+2mll-std-750-164a/ PDF

    100V Single P-Channel HEXFET MOSFET

    Abstract: 12v 10A dc motor mosfet driver
    Contextual Info: PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 POWER MOSFET REF:MIL-PRF-19500/598 THRU-HOLE MO-036AB 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P HEXFET® MOSFET technology is the key to International


    Original     		pd-90436girfg6110jantx2n7336jantxv2n7336+6mil-prf-19500/598mo-036ab150mh266mh100v single p-channel hexfet mosfet12v 10a dc motor mosfet driver PDF

    IRHQ563110

    Abstract: IRHQ567110 lcc 20 test socket
    Contextual Info: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω


    Original     		pd-94057cirhq567110lcc-28irhq563110+4-100vmil-std-750mll-std-750lcc 20 test socket PDF

    2N7635M1

    Abstract: IRHLG7630Z4 IRHLG7670Z4 MO-036AB MO036 2N763
    Contextual Info: PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE MO-036AB Product Summary Part Number Radiation Level IRHLG7670Z4 100K Rads (Si) IRHLG7630Z4 300K Rads (Si) RDS(on) ID 0.6Ω


    Original     		pd-97191b2n7635m1irhlg7670z4mo-036ab+5irhlg7630z4mll-std-750-164a/mo0362n763 PDF

    IRHQ6110

    Abstract: IRHQ63110
    Contextual Info: PD - 91781A IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)


    Original     		1781airhq6110lcc-28irhq63110+3mil-std-750mll-std-750-100v PDF