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IRHG563110 Abstract: IRHG567110 MO-036AB Contextual Info: PD - 94246B IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)	Original	94246b irhg567110 mo-036ab irhg563110 +3mil-std-750 mll-std-750 430mh	PDF

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IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246B IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

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94246b irhg567110 mo-036ab irhg563110 +3

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