2N2907 A TRANSISTOR Search Results

2N2907

Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
Contextual Info: 2N2906 2N2907 2N2906A 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.

2N2907 equivalent

Contextual Info: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: 973 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product.

2N2907

Abstract: 2n2907 TRANSISTOR PNP 2N2906 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906
Contextual Info: Data Sheet 2N2906, A 2N2907, A C p n t r n 1 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION

Contextual Info: SHD430001Q SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 917, REV. - QUAD PNP SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS 2N2907 IN A CERAMIC LCC-28T PACKAGE MAXIMUM RATINGS RATING (ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR)

2n2907 Motorola

Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
Contextual Info: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —

"pnp switch"

Abstract: 2N2906 2N2907 MMCF2221 MMCF2222 MMCF2906 MMCF2906A MMCF2907 MMCF2907A transistor 2n2906
Contextual Info: MMCF2906, MMCF2906A SILICON MMCF2907, MMCF2907A FLIP-CHIP PNP SWITCH AND AMPLIFIER TRANSISTORS Flip'Chip — General purpose PNIP switching and am plifier transistor fam ily similar to the 2N2906,A and 2N2907,A devices. Primary Electrical Features: • DC C urre n t Gain specified fo r 0.1 to 300 m A dc

2n2907

Abstract: 2N2907A 2n2906 2N2907JAN J 2N2907 2N2906JAN 2N2906A
Contextual Info: SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A CRYSTALOMCS 2805 Veteran Highwav Suite 14 PNP Silicon Small-Signal Transistors Ronkor.koma, N .Y . 1 1 7 7 y . designed for high-speed switching and D C to V H F am plifier applications. M A X IM U M R A T IN G S

2N2907

Abstract: 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
Contextual Info: 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching max .0.50 Metal case J E D E C TO -18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

2N4027

Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P

Contextual Info: 2N2907+JAN Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

Contextual Info: 2N2907+JANTXV Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

Contextual Info: 2N2907+JANTX Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

2n4854

Abstract: 2N4855
Contextual Info: TYPES 2N4854, 2N4855 N-P-N, P-N-P DUAL SILICON TRANSISTORS B U L L E T IN NO D L-S 7 2 1 1 6 9 4 , M A R C H 1 97 2 DESIGNED FOR COMPLEMENTARY MEDIUM-POWER HIGH-SPEED SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • 2N4854 Electrically Similar to 2N2222/2N2907

2N2907

Abstract: 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP 2N2222 data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor
Contextual Info: PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A .

2N2907 PNP Transistor to 92

Abstract: 2N2907 plastic 2N2907 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92
Contextual Info: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.

2N2907 PNP Transistor to 92

Abstract: 2N2907A plastic 2N2907 NPN Transistor 2n2907 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor
Contextual Info: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.

2n2905 2n2907

Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
Contextual Info: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application.

2N2907

Abstract: 2N2222
Contextual Info: Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • Switching and linear amplification.

2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
Contextual Info: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose

2N2907

Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Contextual Info: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

st 2n2907 to-18

Abstract: IC 7430 2N2907 philips transistor 2N2222 PHILIPS 2N2222A 0612 2N2907A 2n2907 metal can 2N2222 2N2222A 2N2907
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30 Philips Semiconductors Product specification PNP switching transistors

2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE T> bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.