T31N Search Results

t31n400

Abstract: T31N eupec RA-10n T31N thyristors
Contextual Info: EUPEC T31N S2E D 34032^7 0000hb3 ITT • U P E C 7 Typenrelhe/Type range T 31 N Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom It r m s m Dauergrenzstrom

Contextual Info: EUPEC T31N S2E D 34032^7 0000hb3 ITT • U P E C 7 = ‘2 5 - / 7 Typenrelhe/Type range T 31 N Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Vdrm. Vrrni Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom

CM241

Contextual Info: A CALIFORNIA MICRO DEVICES Microcircuits Division Advanced Information Data Sheet CM561X 3 3V EIA/TIA-562 Tranceiver with Power-Down and Tristate CM OS DESCRIPTION FEATURES The CM561X family o f products is intended for communication applications which satisfy

Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: 79-0306; Rev 3; 3/96 JV X JY X A JW 1fjA S u p p ly C u rre n t, True + 3 V to +S .S V R S -2 3 2 T ra n s c e iv e rs w ith A u to S h u td o w n _ General Description The MAX3221/MAX3223/MAX3243 transceivers are 3Vpowered EIA/TIA-232 and V.28/V.24 communications

BUZ20

Contextual Info: PnwprM OS transistor_ B IIZ 2 0 _ N AMER PHILIPS/DISCRETE ObE D • bb53T31 001441b 5 ■ T-31-n ' GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: ANALOG D EV IC ES FEATURES RS-232 and RS-422 on One Chip Single +5 V Supply 0.1 ¡xF Capacitors Short Circuit Protection Excellent Noise Immunity Low Power BiCMOS Technology High Speed, Low Skew RS-422 Operation -40°C to +85°C Operation +5 V Powered RS-232/RS-422 Transceiver

Contextual Info: +5 V Powered RS-232/RS-422 Transceiver AD7306 A N A LO G D E V IC E S □ FU N C T IO N A L BLO CK DIAGRAM FEATURES RS-232 and RS-422 on One Chip Single + 5 V Supply 0.1 jjlF Capacitors S hort Circuit Protection Excellent Noise Im m unity Low Power BiCMOS Technology

Contextual Info: WAN Multi-Mode Serial Transceiver • ■ ■ ■ ■ L o w -C o st P rog ram m a ble S erial T ra n sce ive r F our 4 D rivers and F our (4) R eceivers D river and R e ceive r T ri-state C ontrol S oftw a re S electab le P rotocol S election Interface M odes:

T-max T3n 250

Abstract: TE675 T21N AD232 10l1f AD232JN AD233 sd 5491 AD238AN AD230
Contextual Info: D~5C-c:t\ +~VI u ~ ,. +5VPowered ANALOG W DEVICES CMOSRS-232Drivers/Receivers FEATURES Single 5 V Power Supply Meets All RS-232-C and V.28 Specifications Multiple Drivers and Receivers On-Board DC-DC Converters :t:9 V Output Swing with +5 V Supply low Power CMOS: 5 mA Operation

mot 0517

Contextual Info: T 31 N Elektrische Eigenschaften Electrical properties H ö c h s tz u lä s s ig e W e rte M a x im u m rated va lu e s P e rio d is c h e V o rw ä rts- und R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g re p e titiv e p e a k fo rw a rd off-state

SAMSUNG GDDR4

Abstract: K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N 136ball K4U52324QE-BC07 k4u52324qe-bc08
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.2 May 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

csi 93c46

Abstract: LC502 20pmt04a IC565 ycl 20PMT04A
Contextual Info: - l 3 VER: 0 . 1 _ K ^ v J !U 334280110 F OR Q U IC K S T A R T M O D E 50 0M H z 45 0M H z 40 0M H z VC C C U f' STt*v . Ü R237 R34 10K 10K = ^ S 'JM P ,. 13 - X J2 _ _ _ -< < rC s D *‘ “r i i - siz e D o c u m e n t Numbe> C PU _A 1 60V 1 60V 1 35 V