2N2646 PACKAGE Search Results

2n2646

Abstract: 2N2646 to18
Contextual Info: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2646 Availability Online Store

Contextual Info: m 2N2646 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) P diss 300 mW @ Tc = 25 °C Tj

2N2646

Abstract: unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package
Contextual Info: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) SO V S00 mW @ Te = 25 0C

transistor 2N2646

Abstract: 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT
Contextual Info: 596 Z8Z. SbE D philips international • 7110a2b 0042bl0 b31 ■ PHIN J - 2 Z-Crt Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of Issue December 1990 Silicon unijunction transistor QUICK REFERENCE DATA PARAMETER SYMBOL CONDITIONS

GES2646

Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
Contextual Info: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors

GES2646

Abstract: 2N2646 Vp GES2647 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646
Contextual Info: G E SOLID STATE 3875081 Ôï G E SOLID STATE »T|3fl7SDÔl 01E GD1 7 tm 17999 fl D T -“ 3 7 - a , / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92

2n2646 2n2647

Abstract: 2N2646 n2646
Contextual Info: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current

2N2646 TO-92

Abstract: transistor 2n4852 transistor 2n4871 2n4871 2N4852 2n2646 package 2N2647 TO-92 2N4853 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 transistor 2N2646
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST \ _ S u rfa ce M o u n t D evices v* ceo suit (Volts) M in NPN 40 MMBT3904 D evice PIMP MMBT3906 MMBT4401 MMBT4403 fT @l c »c »c Im A I M a x M in M ax mA p NF (dB) (M Hz) M ax M in m A Package r D <A m bi

UJT 2N2646

Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
Contextual Info: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

SK9124

Abstract: 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
Contextual Info: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 2N491A Online Store 2N491A Diodes NPN EPITAXIAL PO W ER TRANSISTO R IN TO 6 6 HERM ETIC Transistors P AC KAG E

2SH25

Abstract: TIS43 2N4891 2N6115 2N3480 2N4891 unijunction 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2647 MOTOROLA mu4894 2SH21
Contextual Info: UNIJUNCTION TRANSISTORS Item Number Part Number Manufacturer PD Max W Intrinsic Standoff Ratio Min Max Ip Max (A) Iv Max (A) Interbase Resistance Min (Ohms)Max VB2Bl Max (V) Operating Temperature Min (OC) Max Package Style NP (P-Typ_ Bas_) KT119A KT119B

2n2646 practical application circuits

Abstract: motorola 2n2646 2n2646 motorola 2N2646 TO-92 MC7812 MTS102 2N2646 MTS105 2n2646 application note MTS103
Contextual Info: MTSI02 MTS103 MTS105 SILICON TEMPERATURE ~- SENSORS designed for temperature sensing applications in automotive, consumer, and industrial products requiring low cost and high accuracy. Precise Temperature Accuracy Over Extreme Temperature MTS1 02: f2°C from -40°C to +150°C

2N4947

Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2160 2n4948 2N2646 ti 2n1671 2N3483 2N602 2n3479 2N3480
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SEMICONDUCTOR bï » E J n f m b a aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

2N2646 TO-92

Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

2N5431

Abstract: 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SE MICONDUCTOR bï » E J n f m b a aooaaBb ? UNIJUNCTION TRANSISTORS (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a wide temperature range. These applications include: Pulse Generators, Saw Tooth

mc7812

Abstract: MTS102/D
Contextual Info: MOTOROLA Order this document by MTS102/D SEMICONDUCTOR TECHNICAL DATA MTS102 MTS103 MTS105 Silicon Temperature Sensors Designed for use in temperature sensing applications in automotive, consumer and industrial products requiring low cost and high accuracy.

TDA3541

Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A
Contextual Info: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .

UJT 2N2646 specification

Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

UJT 2N2646 specification

Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

IRF9634

Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402
Contextual Info: DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г

2N2648

Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974

2N3357

Abstract: X0403MF 2N3536 2N3406 2N3668 2n2646 2N3353 2N2646 texas transitron 2N2646p
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Inti Device IntiRect IT 2N2547 Inti Device IntiRect IT 2N2548 Inti Device IntlRect IT 2N2549 Inti Device IntiRect IT 2N2550 Inti Device IntlRect IT 2N2574 2N2575 2N2576 2N2577 2N2578 2N2579 2N2619

2SH25

Abstract: 2n16718 TIS43 2N6115 diode 2n1775 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 GES2647 2N2646 texas 2N4891 2N4947
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer TexslnstLtd 2N888A Inti Device 2N889 CSR Indus GnrlElee/GE Motorola TAG Semi TexslnstLtd 2N889A Semitronies 2N890 Inti Device TAG Semi 2N891 Inti Device TAG Semi 2N892 Semitronics 2N893 Transitron

C10601

Abstract: 2N2646P S10601 RCA 2N3525 NEC 3P4MH 2N2646 motorola nec 3S4M 2N3106 s20600 TLS106-4
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Inti Device IntiRect IT 2N2547 Inti Device IntiRect IT 2N2548 Inti Device IntlRect IT 2N2549 Inti Device IntiRect IT 2N2550 Inti Device IntlRect IT 2N2574 2N2575 2N2576 2N2577 2N2578 2N2579 2N2619