2N248 Search Results

2N2484UA

Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN

2n3904 2n3906

Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Contextual Info: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 This transistors is primarily intended for use in high performance, low level,

2N2484

Abstract: 2N2484J 2N2484JS 2N2484JV 2N2484JX
Contextual Info: 2N2484 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2484J • JANTX level (2N2484JX)

2N2484

Abstract: Transistor 2N2484
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 This transistors is primarily intended for use in high performance, low level, low noise amplifier applications ABSOLUTE MAXIMUM RATINGS

2N2484 motorola

Abstract: MP024 2N2483 2N2484 MPQ2483 MPQ2484 MP02483
Contextual Info: QUAD DUAL IN-LINE NPN SILICON MATCHED AMPLIFIER TRANSISTORS . designed for low-level, high-gain amplifier applications. @ Low Noise Figure – @ Ic = 10pAdc NE = 3.0 dB Typ – MPQ2483 = 2.0 dB (Typ) – MPQ2484 @ Transistor Similar @ Compact Size to 2N2483

Contextual Info: 2N2484 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2484J • JANTX level (2N2484JX)

2N2483

Abstract: 2N2484 2N2586 2N2897 2N3117 2N3647 2N3700 2N6430 2N706 2N706A
Contextual Info: Maximum Ratings Type No. 2N2483 VC0O V Min ^CEO ^EBO (V) Min (V) Min 60 60 6 Po (W) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (A) ^CM 'cBO ^C B (A) (PA) Max e (V) 0.01 45 Tc=25°c 0.36 0.05 ^CES ^CE "re @ 'c & (mA) (MA) 0 (V) Max

Fairchild, 2N3019

Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN

2N2484ADCSM

Contextual Info: 2N2484ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

Contextual Info: 2N2485 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)8.8# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.10 h(FE) Max. Current gain.

Contextual Info: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier

FERRITE lcc

Abstract: SOC2484
Contextual Info: 2N2484HR Hi-Rel NPN bipolar transistor 60 V, 50 mA Datasheet - production data Features 1 Parameter Value BVCEO 60 V IC max 50 mA hFE at 10 V - 150 mA > 250 Operating temperature range - 65 °C to + 200 °C 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics

2n2771

Abstract: 2N2483
Contextual Info: Search Results Part number search for devices beginning "2N2483" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N2483 NPN TO18 60V 0.05A 80 - 5/1m - 0.36W

Contextual Info: 2N2483-JQR-B Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products

2n2484 motorola

Abstract: 2N2484 motorola 2N2484
Contextual Info: MOTOROLA Order this document by 2N2484/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor LAST SHIP 21/03/00 2N2484 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 60 Vdc Collector– Base Voltage

JESD22-A101

Abstract: JESD22-A102 JESD22-A103 JESD22-A113
Contextual Info: INCH-POUND MIL-PRF-19500/674 16 July 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.

2N2484

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor crystaloncs 2eo$ veterans Highway Suite 14 . designed tor general-purpose amplifier applications. Ronkof.koma, N.Y. 1177b, MAXIMUM RATINGS Unit Symbol Value CoRector-Emitter Voltage VCEO

12W SOT23

Abstract: 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23
Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2N2484

Abstract: transistor TL 431 g Transistor 2N2484
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2484 TO-18 This transistors is primarily intended for use in high performance, low level, low noise amplifier applications ABSOLUTE MAXIMUM RATINGS

PN2222A MOTOROLA

Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

12w sot23

Abstract: transistor sot23 pf oa
Contextual Info: Illl = ^ = Illl SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)