2N2222A MARKING CODE Search Results

Contextual Info: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

Contextual Info: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

CW-75

Abstract: 2N2222A marking code 2N2222A marking
Contextual Info: 2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

2N2222A metal package

Abstract: 2N2221A-2N2222A of 2N2222A
Contextual Info: Small Signal General Purpose Transistors NPN 2N2221A/2N2222A Small Signal General Purpose Transistors (NPN) Features • Switching and Linear Application DC and VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case:

SMD Code 12W SOT-23

Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED

2N2222A 331

Abstract: JANHCC2N2222A transistor equivalents for 2n2222a 2N2222A JANTXV JANHCB2N2222A 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2222A
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 May 2002. MIL-PRF-19500/255N 15 February 2002 SUPERSEDING MIL-PRF-19500/255M 20 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,

2N2222A 331

Abstract: 2N2222A JANTX JANHCC2N2222A 2N2222A JANTXV 2n2222aub marking 2N2222AUB 2N2221A JANTX 2N2222A JAN 2N2222AL 2N2221A
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 7 May 2010. INCH-POUND MIL-PRF-19500/255W w/AMENDMENT 1 7 February 2010 SUPERSEDING MIL-PRF-19500/255W 6 September 2007 PERFORMANCE SPECIFICATION SHEET

d2 SMD TRANSISTORs pnp npn

Abstract: BCW600 2n2222a smd smd transistors B5R17 hS7 marking darlington bc smd smd marking BJ
Contextual Info: SMD Transistors SOT-23 Case 350mW Proelectron Series— Confd Q <' H MARKING CODE SIMILAR LEADED DEVICE — 3K BC5586 — 3L Cofc PF MAX (MHz) TYP NF (dB) MAX tofF (mA) 0.65 100 4.5 150 10 0.65 100 4.5 150 10 2.0 0.65 100 4.5 150 4.0 — 50 2.0 0.65 100

SMD Code 12W SOT23

Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
Contextual Info: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH

marking code ff SMD Transistor

Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Contextual Info: CENTRAL SE MI C ON D UC T O R ÜË dI~ § M a n ta 00G0430 3 f r-z 7 -2 ? ~ @§nijg§£3S Cestirai liüiie@ndugf@? gsrp. ♦I Central semiconductor Corp. Ï S tfii s@rusüG mö©g @? @@pp. SURFACE MOUNTED DEVICES TRANS I St OÄ: SOT- 23, SOT-89 145 Adams Avenue

Contextual Info: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic

PNP marking VA sot-23

Abstract: CERSOT-23 sot-23 marking VA
Contextual Info: Transistors CERSOT-23 Case • • • • Hermetically Sealed, Ceramic Leadless Chip Carrier. Ultra Miniature Surface Mount Case. Mounts Directly on Standard SOT-23 Mounting Pads. JANTXV Construction Including Precap Visual Inspection. TYPE NO. CHT918 DESCRIPTION BVceo ICBO< >VCBO h *6 • va • t e VÇSfSAl

smd code marking rf ft sot23

Abstract: smd 2n2907a 2n2222a smd CERSOT-23 2n2222a sot23 CERSOT23 SA1 SOT23 marking code NF SMD F MARKING
Contextual Info: SMD T ran sisto rs Q CERSOT-23 Case • • • • Hermetically Sealed, Ceramic Leadless Chip Carrier. Ultra Miniature Surface Mount Case. Mounts Directly on Standard SOT-23 Mounting Pads. JANTXV Construction Including Precap Visual Inspection. DESCRIPTION

2N2222A

Abstract: 2N2907A CMLT2207
Contextual Info: Central CMLT2207 SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature

2N2222A npn transistor

Abstract: marking l7g 2N2222A 2N2907A NPN transistor 2n2222a 2N2907A PNP Transistor
Contextual Info: CMLT2207G SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and

BCB60

Abstract: transistor smd npn ag smd npn darlington "low noise" npn bcf70 d2 SMD TRANSISTORs pnp npn darlington bc smd H7 marking code smd marking code transistors BSV52 SMD MARKING CODE vk
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

OF 8 pin 38092

Abstract: 28092 38092
Contextual Info: application INFO available UCC1809-1/-2 UCC2809-1/-2 UCC3809-1/-2 Economy Primary Side Controller FEATURES DESCRIPTION • User Programmable Soft Start With Active Low Shutdown The UCC3809 family of BCDMOS economy low power integrated circuits contains all the control and drive circuitry required for off-line and isolated

d2 SMD TRANSISTORs pnp npn

Abstract: BCS59 2n2222a smd BC558B BC558C BC559 BC858B BC858C BC859 SMD marking bcw60
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE

Contextual Info: CMLT2207G SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PlCOmini™ DUAL,COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured

Contextual Info: MVR2N2222AUB / UBC Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic

2N2222A npn transistor

Abstract: 2N2907A PNP Transistor 2N2222A 2N2907A CMLT2207
Contextual Info: CMLT2207 DUAL COMPLEMENTARY TRANSISTORS SOT-563 CASE TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary

Contextual Info: MVR2N2222A L Qualified Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is