2N 4221 Search Results

sd 4093

Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
Contextual Info: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A

Contextual Info: S G S— THOMSON ?1C D | 7 ^ 2 3 7 GGOMfl?! S | " ^ ¿ 7 . 2,5 " THOfviSOM SEMICONDUCTORS n channel field effect transistors - metal case Types 2N 2N 2N 2N 2N 3821 3822 3823 < 3824 3966 2N 4117 2N 4117 A 2N 4118 2 N 4 1 I8 A 2N 4119 2N 4119 A 2N 2N 2N . 2Ñ

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

HF 4093 N

Abstract: bf 4393 4392 2N4119
Contextual Info: N CHANNEL FIELD EFFECT TRANSISTORS - METAL CASE Typ«« 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 A p p lic a tio n AF/R F general purpose Usage g é n é ra i BF/H F 2N 4117 2 N 4 1 17 A 2 N 4118 V BR GSS m in •g s s m ax IV ) ip A r (n A ) -5 0 -5 0 -5 0

J2N4393

Abstract: J2N4416 IC 4093 J-2N4393 2N 2222 J2N4222 J-2N4093 J-2N4416 J2N4392 J2N2222A
Contextual Info: chips/pastilles y signal transistors transistors de signal THOMSON-CSF P Types v CEO 1*21 E NPN PNP Dimensions mA (mm) (W) (V) J-2N 2906 0,5 0,4 30 40 40 40 120 120 150 150 0,45 0,45 0,5 0,4 40 60 40 40 120 120 150 150 0,45 0,45 X J-2N 2906 A 0,5 0,4 30

FX2N-128MR

Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
Contextual Info: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2N422A

Abstract: 4221
Contextual Info: *2 N 4220, A *2 N 4221, A *2 N 4222,A FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL TRANSISTOR A E FF E T DE CHAMP, SILIC IU M . CANAL N % Preferred device Dispositif recommandé - LF amplification A m plifica tio n BF 'DSS r 21s F 100 Hz 0 ,5 - 3 mA 2 - 6 mA

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

case to106

Abstract: 2n5163 TO-106 5458 MEF3069 MEF103 2N4303 2N3070 245C 2N 5163
Contextual Info: fl-Channel Junction F E T General Purpo/e Tron/i/lor/ r BVg ss Yfs •d s s T Y P E NO. m in . m in ./m a x . m in ./m a x . V GS o ff m a x. ^iss Crss NF @ 1KHz ' gss m ax. m a x. m ax. m a x. 2.5dB 2 .5dB 4 .0 d B 4 .0 d B 1.0dB 1.0dB TYPE. 0 .1 0 n A

triac LT 5220

Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

FN4393

Abstract: 2N4119 2N4117 FN4392 2N4340 2N4341 J231 2N4117A 2N4118 2N4118A
Contextual Info: SMAUECT D m r i i ia I SIGNALI I. I r IVUUVI IVUliWI Id 7-e N&P-Channel Single JFETs 3 250 250 3 3 330 330 210 210 250 250 330 330 330 210 210 250 250 330 330 3 0.1 18 6 .0 -40 -40 -4 0 -4 0 -4 0 -4 0 -4 0 -4 0 2.0 -4 0 2.0 -4 0 6.0 40 40 _ 4 .0 - 6 .0 8 .0

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

2N4119

Abstract: 4392 transistor ESM 30 2N4117 2N4118A 2N 4092 2N 4221 2N 4391 2N 4416 2N3823
Contextual Info: T O 18 CB 6 N channel field effect transistors (metal case) Tamb - 25°C Transistors à e ffe t de champ, canal N (boîtier m étallique ) Case Type V (BR)GSS (V) B oîtie r min •g s s InA) / (pA )* I dss <mA) 21 s <mS) max m in max y m in max v GSoff

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a