2N 4092 Search Results

sd 4093

Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
Contextual Info: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A

Contextual Info: S G S— THOMSON ?1C D | 7 ^ 2 3 7 GGOMfl?! S | " ^ ¿ 7 . 2,5 " THOfviSOM SEMICONDUCTORS n channel field effect transistors - metal case Types 2N 2N 2N 2N 2N 3821 3822 3823 < 3824 3966 2N 4117 2N 4117 A 2N 4118 2 N 4 1 I8 A 2N 4119 2N 4119 A 2N 2N 2N . 2Ñ

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

HF 4093 N

Abstract: bf 4393 4392 2N4119
Contextual Info: N CHANNEL FIELD EFFECT TRANSISTORS - METAL CASE Typ«« 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 A p p lic a tio n AF/R F general purpose Usage g é n é ra i BF/H F 2N 4117 2 N 4 1 17 A 2 N 4118 V BR GSS m in •g s s m ax IV ) ip A r (n A ) -5 0 -5 0 -5 0

J2N4393

Abstract: J2N4416 IC 4093 J-2N4393 2N 2222 J2N4222 J-2N4093 J-2N4416 J2N4392 J2N2222A
Contextual Info: chips/pastilles y signal transistors transistors de signal THOMSON-CSF P Types v CEO 1*21 E NPN PNP Dimensions mA (mm) (W) (V) J-2N 2906 0,5 0,4 30 40 40 40 120 120 150 150 0,45 0,45 0,5 0,4 40 60 40 40 120 120 150 150 0,45 0,45 X J-2N 2906 A 0,5 0,4 30

2N4093

Abstract: 2N4092 2N4091 to92 2n4091
Contextual Info: OßffiÜ^OlL ITE4091-ITE4093 2N 4091-2N 4093, JA N TX * N-Channel J F E T FEATURES • 'DS ON < 3 0 ohm s(2N4091) • !D ( O F F ) PIN CONFIGURATIONS < 100 PA (JA N TX Types) TO-92 T O -« • F a st S w itching CHIP TOPOGRAPHY NOTE SUBSTRATE I! ABSOLUTE MAXIMUM RATINGS

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2N4091

Abstract: 2N4092 4093 N 2N4093 2N 4092 4093 4091 4092 2N 4091 2N4093A
Contextual Info: * 2 N FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILIC IU M . C ANAL N 4 0 9 1 , A * 2 N 4 0 9 2 , A * 2 N 4 0 9 3 , A % Preferred device D is p o s itif recommandé Fast switching Commutation rapide Chopper 30 mA min. 2N 4091, A

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

triac LT 5220

Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

BSV20A

Abstract: 10n60m NS1110 BSX84 L51A NS1116 dm-58 550n 2N695 2N725
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

TF80/30

Abstract: 2N1504 TF80/60 ZA24 Transistor 2N625 OD603 2SB84 2SB107 tf80-30 NS1110
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2N4119

Abstract: 4392 transistor ESM 30 2N4117 2N4118A 2N 4092 2N 4221 2N 4391 2N 4416 2N3823
Contextual Info: T O 18 CB 6 N channel field effect transistors (metal case) Tamb - 25°C Transistors à e ffe t de champ, canal N (boîtier m étallique ) Case Type V (BR)GSS (V) B oîtie r min •g s s InA) / (pA )* I dss <mA) 21 s <mS) max m in max y m in max v GSoff

transistor LT5210

Abstract: LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

dm-58

Abstract: 2N2238 2N1056 2N3443 2SB381 2SB383 2SB382 T03A 2N1287A 98T2 2SB226
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C