2MBI400L060 Search Results

Contextual Info: 2MBI400L060 Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V)20 I(C) Max. (A)400 Absolute Max. Power Diss. (W)1.6k‚ Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case.08

BT diode

Contextual Info: 2MBI400L-060 IG B T 3 . — JU IG B T M ODULE : Features High Speed Sw itching • W E S E tb V oltage Drive : A p p licatio n s Inverter for M otor D rive • A C , D C "tf — i $ T > " ? AC-DC Servo Drive Amplifier U n in terru p tib le P o w e r S u p p ly

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

1MBI30L-060

Abstract: 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060
Contextual Info: SECOND GENERATION IGBT 600 VOLT, F-SERIES MODULES, PT TECHNOLOGY • Low saturation voltage Device Type DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES V c es lc Pc VcE sat PerlGBT Volts Cont. Amps Watts Max. Volts

2mb175

Abstract: 1MBH60-090 2MB175L-060 HIGH VOLTAGE DIODE for microwave ovens 1mbh 1MBH65-090 ERD60-100 T0220AB T03PL imbi300
Contextual Info: \W]IGBT mold types • • • • High speed sw itching • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w er drive Su ited fo r high fre q u e n c y p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.

2MBI400L-060

Contextual Info: FUJI 2-Pack IGBT 600 V 400 A 2MBI 400L-060 IGBT MODULE L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive Am plifier • Uninterruptible Power Supply

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

M217

Contextual Info: IGBT 600 VOLT, F-SERIES MODULES • Low saturation voltage Vces . DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES 1MBI300F-060 1MBI400F-060 :ic ; VcE sat VGe = 15V Switching Time (Max.) Max. lc ton . :iott;!."" tr.

igbt 300V 400A

Abstract: 2MBI400L-060 2MBI400L060
Contextual Info: 2MBI400L-060 400A IGBT Module 600V / 400A 2 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance

imbi300

Contextual Info: [ÜT| IGBT mold types • • • • High speed sw itch in g • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w e r drive Su ited fo r high fre q u en cy p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

Contextual Info: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.

1mbh

Contextual Info: D IG B T m old types 1High speed sw itching • Lo w saturation voltage Voltage drive m ethod perm its low pow er drive Su ited for high freq uency po w er supplies, such as m icro w a ve ovens 1W h e n using these IG BT s, F U JI'S fast recovery diode ERD60-100 is required.

0.35

Abstract: M219
Contextual Info: / \ ° 7 — t / W * / Power Devices • IG B T iy LvU-X IGBT Modules, L series 6 0 0 V ? yj-yvn 600 volts class/High speed switching m it Device type Voes V g es tc Cent. Amps. Pc VCE'.m i .' \V 3£s»15V i W alk {M ax.} Volte 1' Amps ton ^ m e. Switching time (Max. '

1mb12-140

Abstract: 1MBI30L-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 2MBI100F-060 1mbh collmer igbt
Contextual Info: IGBT DISCRETE T0-3PL, T0-3PF & BBT PACKAGE Device V ces V ce sat V qe=15V Pkg. Switching time (Max.) lc PC cont. Par IGBT Max. lc ton V ges type toff tf Volts Volts Amps. Watts Volts Amps. H sec. 1MB12-140 1400 ±20 12 100 6.0 12 - 1.2 1.0 T03P F - sec.