2F 1 MARKING Search Results

PG12FBUSC

Contextual Info: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

PG12FBUSV

Contextual Info: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

marking 2f 3

Abstract: MMBT2222A MMBT2907A marking 2f
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F

MARKING 2F SOT23

Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Contextual Info: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

pnp 2f

Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

pnp 2f

Abstract: marking 2F
Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR

CMBT2907

Abstract: CMBT2907A
Contextual Info: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

Contextual Info: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4

2F PNP SOT23

Abstract: marking 2f 2f transistor SOt23
Contextual Info: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)

Contextual Info: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

2907 TRANSISTOR PNP

Abstract: 2907 2907 pnp 2907 pnp transistor
Contextual Info: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings

2907 TRANSISTOR PNP

Abstract: transistor 2907 Q68000-A8300 MARKING 7C
Contextual Info: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E

IC marking jw

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_

Contextual Info: iC-TL85 TO46-2F Infrared LED Rev B2, Page 1/4 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ Illumination for high resolution optical encoder ♦ Modulated light barriers Emission peak at 850 nm matched to silicon sensors Temperature range -40 to 125 °C

phison

Contextual Info: PS3006 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3‐5833899‐3001 or 1001 or 1005 Fax： 886‐3‐5833666 Phison PS3006 Controller Version 1.2 1 11/14/2007 PS3006

smd diode schottky code marking 2F

Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.

atmel 951

Abstract: 4267C mcga
Contextual Info: MCGA 472 Multi Layer Column Grid Array MCGA Package Drawings Code: 2C and 2G (grounded lid) Date: 24/04/03 Rev. C 4267C–AERO–07/07 1 MCGA349 Code: 2E and 2H (grounded lid) Date: 06/2003 2 4267C–AERO–07/07 MCGA625 Code : 2F (grounded lid) Date : 27/03/2007

FMQ-G2FLS

Abstract: crt 1700 FMQ-G2FS fmqg2f RH2F RH3G 3b2 marking RH 3G 3FS MARKING RH 3F
Contextual Info: Damper Diodes 4-6 4-6-1 Damper Diodes Part No. Application RH 2D For TV 90% Recovery Point trrw : IR=2xIF 75% Recovery Point VRM IF trrq trrw V (A) (µS) (µS) 1300 Package Fig. No. 1.0 4.0 1.3 Axial(R2) 2 RH 10F 0.8 4.0 1.3 Axial(R1) 1 RH 2F 1.0 4.0 1.3

Contextual Info: B 1-COLOR O P E R A T I N G DIALIGHT P/N CATHODE MARKING COLOR CHARACTERISTICS mA M I N . TY P . M A X . .149/.134 [3.80/3.40] 5 9 7 - 2 0 0 1 - 2 1 3F 5 9 7 - 2 0 0 1 -202F RED 5 9 7 - 2 3 0 1 - 2 1 3F 597-2301 -2 0 2F GREEN 5 9 7 - 2 4 0 1 - 2 1 3F 5 9 7 - 2 4 0 1 -202F

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