2F 1 MARKING Search Results

PG12FBUSC

Contextual Info: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

PG12FBUSV

Contextual Info: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

marking 2f 3

Abstract: MMBT2222A MMBT2907A marking 2f
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F

MARKING 2F SOT23

Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Contextual Info: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

pnp 2f

Contextual Info: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR

CMBT2907

Abstract: CMBT2907A
Contextual Info: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

Contextual Info: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

MARKING 7A SOT89

Abstract: SXT2907 SXT2907A T2907A
Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings

2907 TRANSISTOR PNP

Abstract: 2907 2907 pnp 2907 pnp transistor
Contextual Info: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings

IC marking jw

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_

atmel 951

Abstract: 4267C mcga
Contextual Info: MCGA 472 Multi Layer Column Grid Array MCGA Package Drawings Code: 2C and 2G (grounded lid) Date: 24/04/03 Rev. C 4267C–AERO–07/07 1 MCGA349 Code: 2E and 2H (grounded lid) Date: 06/2003 2 4267C–AERO–07/07 MCGA625 Code : 2F (grounded lid) Date : 27/03/2007

Contextual Info: B 1-COLOR O P E R A T I N G DIALIGHT P/N CATHODE MARKING COLOR CHARACTERISTICS mA M I N . TY P . M A X . .149/.134 [3.80/3.40] 5 9 7 - 2 0 0 1 - 2 1 3F 5 9 7 - 2 0 0 1 -202F RED 5 9 7 - 2 3 0 1 - 2 1 3F 597-2301 -2 0 2F GREEN 5 9 7 - 2 4 0 1 - 2 1 3F 5 9 7 - 2 4 0 1 -202F

Contextual Info: , anM n ETMST?¿SSmS!enmSt^dcrZmil\ or In pwt. fer mmtaotur* or M h Ik « |« m n w Dm ta f h m l '• aM nat *» prior oonowt, * ttaifli»r rtght ■ li -g *-• *— W Infcwwat&i In M i 6,00±0,£5 œ. n o +1 2f n ' TOLERANCE +/-0.03 4 3 2 1 REVISIONS

smd diode marking YK

Contextual Info: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use

DIODE 2FL 20U

Abstract: 2FL 20U
Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE D2FL20U Unit.: mm Package : 2F Weight 0.16jf T yp a y —K v —» 2 0 0 V 1 ,5A ! Feature • /JvSÜSMD • S m all S M D •e y - fx • Low N o ise • trr~35ns • trr-3 5 n s 1 2FL 20U C a th o d e m a rk

2FL20U

Contextual Info: Super Fast Recovery Diode Single D iode OUTLINE Package : 2F m tm D2FL20U U n it- m m W e ig h t 0 .1 6 g T y p io y - F - e - ? / C athode m a rk 200V 1.5A 'Iggsl Feature • /Jv P S M D • Sm all SM D • f îy - f X ' • Low Noise • trr=35ns • trr=35ns

diode Marking code v3

Abstract: 2F SMD CODE MARKING D2FL20U ,diode Marking code v3 smd diode marking code v3 smd diode 2F DIODE smd marking CODE WA smd marking code je SMD MARKING CODE vk smd marking code vd
Contextual Info: Super Fast Recovery Diode mtmm o u t l i n e D2FL20U U nit I mm Package : 2F W eight 0.16g Typ Cathode mark 200V 1,5A Feature • /J ^ S M D • S m a ll S M D • e y - r x • L o w N oise • tr r = 3 5 n s • tr r-3 5 n s 1 2 FL 20U .8 2 Single Diode

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

Battery Charger with SCR

Abstract: Battery Charger by using SCR AT1453 AT1453AP AT1453BP scr battery charger circuit diagram BATTERY CHARGER SCR scr battery charger scr use in battery charger scr trigger battery charger
Contextual Info: AT1453 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.

Contextual Info: TPS53317 www.ti.com SLUSAK4C – JUNE 2011 – REVISED JANUARY 2014 6-A Output, D-CAP+ Mode, Synchronous Step-Down, Integrated-FET Converter for DDR Memory Termination Check for Samples: TPS53317 FEATURES DESCRIPTION • The TPS53317 is a FET-integrated synchronous buck