2C3439 Search Results

chip die npn transistor

Contextual Info: 4bE D b3b7254 OQTSTSl M OT OR OL A 3 • HOTbT-31 XSTRS/R sc F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C3439HV Chip NPN Silicon Small-Signal Transistor DM0 m ini Discrete Military Operation . .designed for high-voltage, high-current applications in switching and amplifier service.

2C3439

Contextual Info: _P_P_C P R O D U C T S CORP SSE D • bflSbni G000ÖÖ7 T ■ ! NPN Power Transistor Chips 2C3439 ,—p FEATURES iI I CHIP TYPE: AA • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal Collector - Gold - 3,000 A Nominal

Contextual Info: 2C3439 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)450 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2C3439HV

Abstract: 650C
Contextual Info: MOTOROM Order this document by 2CW9HWD SEMICONDUCTOR TECHNICAL DATA o ft. b-. ,.;y.,;~,?. .,.,~, .’, , Ill. ,$tlt , il[ill’ y, 2C3439HV Chip NPN Silicon Srnall+ignal Transistor . designed ~o for highvoltage, higburrent appliostions in switching and amplifier service.

2C3439

Contextual Info: NPN Power Transistor Chips 2C3439 FEATURES CHIP TYPE: AA • Triple Diffused, Planar Design • C ontact M etallization: Base, E m itter - A lum inum - 20,000 A N om inal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 7 M ils N om inal E = Emitter Pad .007 x .0065

Contextual Info: 2C3439HV Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350è V(BR)CBO (V)450 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)0.8 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)360 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)50m

2N3440 MOTOROLA

Abstract: MM421 MOTOROLA transistor 413 MM420 SILICON SMALL-SIGNAL DICE
Contextual Info: MOTOROLA SC 34 -CDIODES/OPTO} D " I b3b7255 34 C □037105 37982 T - i S '- t s ' SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C3439 DIE NO. — NPN LINE SOURCE — DSL242 & This die provides performance simifar to that of the following device types:

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

500t

Contextual Info: MO T O R O L A SC DIODES/OPTO 3TE D • b3b?2S5 DD617T1 T ■MOT7 Chips Selector Guide ° The following tables list the various Motorola discrete product chips first by specific product categories and then in a logical fashion that permits rapid comparison of the more important