2BR MARKING Search Results

Ag9400

Abstract: Ag9400-2BR AG9405-2BR Ag9412-2BR Ag9424 Ag9412-S Ag9424-S Ag9405-S Ag9400-S ethernet transformer centre tap
Contextual Info: V2.3 May 2010 Datasheet Silvertel Ag9400 Power-Over-Ethernet Module 1 Features Pb ¾ IEEE802.3af compliant ¾ Small SIL package size - 56mm L x 14mm (H) ¾ Low cost ¾ Input voltage range 36V to 57V ¾ Minimal (low cost) external components required ¾ Short-circuit protection

Ag9412

Abstract: AG9405-2BR Ag9412-S Ag9400 Ag9412-2BR Ag9400-2BR Ag9400-S Ag9405-S RJ45 socket TRANZORB
Contextual Info: V1.0 April 2008 Data Sheet Silver Ag9400 TELECOM Power-Over-Ethernet Module Pb 1. Features ¾ IEEE802.3af compliant ¾ Small SIL package size - 56mm L x 14mm (H) ¾ Low cost ¾ Input voltage range 36V to 57V ¾ Minimal (low cost) external components required

Contextual Info: TPD3E001 LOW-CAPACITANCE 3-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES www.ti.com SLLS683D – JULY 2006 – REVISED APRIL 2007 FEATURES APPLICATIONS • • • • • • • • • • • • • • • ESD Protection Exceeds

Ag9605-2BR

Abstract: Ag9600 Ag9600-S Ag9612-2BR ag9605 Ag9605-S TRANZORB Ag9612-S Ag9603-2BR Ag9600-2BR
Contextual Info: V1.2 August 2009 Datasheet Ag9600 Silvertel Power-Over-Ethernet Module 1. Features Pb ¾ IEEE802.3af compliant ¾ Small SIL package size - 56mm L x 14mm (H) ¾ Low cost ¾ Input voltage range 36V to 57V ¾ Minimal (low cost) external components required

2SK374

Contextual Info: Silicon Junction FETs Small Signal 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF)

2SK2593

Abstract: SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55

1-57748-0

Abstract: DFFC 0.5-1.0 1480000000
Contextual Info: SLA/BLA - Die Einzigartigen Unimate Range - SLA/BLA Socket blocks BLAC R Socket blocks BLAC BR Crimp contacts for BLAC 5.08 Technical Data VDE Rated voltage V 250* Rated current A 14 Clamping range max. mm2/AWG 2.5 *Overvoltage category III / Pollution severity 3

2SK663

Contextual Info: Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 3 2 Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55

Contextual Info: 2SK663 Silicon Junction FETs Small Signal 2SK663 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 ● Downsizing of sets by S-mini type package and automatic insertion 0.3 -0 Low noise type

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

H7545

Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
Contextual Info: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60

2SK2593

Abstract: SC-89 2BR marking
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 0.28±0.05 (0.44) 3° (0.44) 1 2 1.60±0.05 (0.80) 3 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05

2SK0663

Abstract: 2SK663 2BR marking
Contextual Info: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching (0.425) unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ● Low noise-figure (NF)

2SK2593

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03

MA56

Abstract: 2SK321 2SK374 panasonic capacitor FL
Contextual Info: P A N A S O N IC I N D L /E L E K iS E M I } 7SC D | b T B 5 fl5 M D D C H b fla 2SK321 2SK321 '> ij zi > N f v N-Channel Junction /A w lt-iS it^ l^ iliffl/W id e -B a n d , Low-Noise Amplifier > ^ f fl/V id e o Camera • # • ^ ¡/F e a tu r e s A £ # l l : C is s * ' V J ' ? V ^ 0 / L o w

2SK0374

Abstract: 2SK374
Contextual Info: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF)

2SK2593

Abstract: SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55

2SK0663

Abstract: 2SK663
Contextual Info: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 VDSX 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage

Contextual Info: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 3 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF) ● High gate to drain voltage VGDO

2SK0374

Abstract: 2SK374 2BR marking
Contextual Info: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF)

Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 ● Low noies, high gain ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic

2BR marking

Contextual Info: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 5° 0.4±0.2 2.8+0.2 –0.3 ● Low noise-figure (NF)

Contextual Info: TPD3E001 LOW-CAPACITANCE 3-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES www.ti.com SLLS683D – JULY 2006 – REVISED APRIL 2007 FEATURES APPLICATIONS • • • • • • • • • • • • • • • ESD Protection Exceeds

Vishay Roederstein EBR

Abstract: roederstein capacitor tantalum roederstein tantalum 47402 156025 roederstein tantalum capacitors TD5 capacitors 335002 ROEDERSTEIN ETD type
Contextual Info: VISHAY INTER/ ROEDERSTEIN L2E J> 7fl21b24 DDD1R7S 352 Tantalum Chip Capacitors Sintered Anode, Solid Semiconductor Electrolyte, +125°C ETD Structure: Dimensions Tantalum chip capacitors with sintered anode and solid semiconductor elec­ trolyte, flame retardant encapsulation