2SK0663 Search Results

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-sourse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package ■ Features • Low noise figure NF • High gate-drain voltage (source open) VGDO • SMini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing

2SK0663

Abstract: 2SK663
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in

2SK0663G

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g

2SK0663G

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

2SK0663

Abstract: 2SK663
Contextual Info: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 VDSX 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage

2SK0663

Abstract: 2SK663
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 • Features

2SK0663

Abstract: 2SK663 2BR marking
Contextual Info: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching (0.425) unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ● Low noise-figure (NF)

2SK0663

Abstract: 2SK663
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package ■ Features • Low noise figure NF • High gate-drain voltage (source open) VGDO • S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package • Low noise figure NF

2SK0663

Abstract: 2SK663
Contextual Info: Silicon Junction FETs Small Signal 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Low noise figure NF • High gate-drain voltage (source open) VGDO

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the