2A MARKING SOT23 Search Results

2AX sot-23

Abstract: marking 2AX sot-23 MARKING 2Ax 2A MARKING SOT23 MARKING 2A MARK 2A marking 2A sot23
Contextual Info: SEMICONDUCTOR Z02W2.0V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 2AX No. 1 Item Marking Device Mark 2A Z02W2.0V Voltage Grade X X,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

LMBT3906LT1G

Abstract: LMBT3906LT1 1N916
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G

MMBT3904 jiangsu

Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 3 FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device LMBT3906TT1 Marking Shipping 2A 3000/Tape&Reel SC-89 MAXIMUM RATINGS Symbol Value

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G

SMD TRANSISTOR MARKING 2A pnp

Abstract: CMBT3906
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A

KST3906

Abstract: WH*s
Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage

Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage

MMBT3906 UTC

Contextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

Contextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

Contextual Info: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector

SOT23 marking 619

Abstract: marking 619 npn sot23
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A

FMMT619

Abstract: fmmt720
Contextual Info: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation

Contextual Info: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23

marking 056

Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Contextual Info: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to

Contextual Info: A Product Line of Diodes Incorporated FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -60V   IC = -1A High Continuous Collector Current   ICM = -2A Peak Pulse Current   RSAT = 295mΩ for a Low Equivalent On-Resistance

Contextual Info: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound

91A SOT23

Abstract: FMMT591A FMMT491A DSA003699 91A PNP
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage

FMMT549

Abstract: fmmt549a FMMT549TA 59a sot23
Contextual Info: A Product Line of Diodes Incorporated FMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > -30V Maximum Continuous Collector Current IC = -1A

2A SOT23

Abstract: stp6
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS R DS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE