2SK2996 Search Results

Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r •

2SK2996 equivalent

Abstract: 2sk2996 3RH19 21-1DA11
Contextual Info: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)

2SK2996

Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r •

2sk2996

Contextual Info: T O S H IB A 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3

2SK2996

Contextual Info: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)

k2996

Abstract: k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor
Contextual Info: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)

2SK2996

Abstract: slms 2.0 SLMS 2
Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r < v> • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • ¿3.2 ±0.2 10±0.3 Low Drain-Source ON Resistance : Rd S (ON) = 0.74 il (Typ.)

2SK2996

Abstract: 2SK2996(Q)
Contextual Info: TOSHIBA 2SK2996 SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS Low Drain-Source ON Resistance : Rd S(ON) = 0.740 (Typ.)

K2996

Abstract: k2996 transistor transistor k2996 2SK2996 toshiba k2996
Contextual Info: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)

k2996

Abstract: K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996
Contextual Info: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance z Low leakage current

2SK2996

Contextual Info: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) l High forward transfer admittance : |Yfs| = 6.8 S (typ.)

2SK2996

Abstract: DIODE ED 34
Contextual Info: TO SHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

2SK2996

Abstract: transistor 1127
Contextual Info: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Contextual Info: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

2SK3562

Abstract: 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS
Contextual Info: VOLUME 131 東芝半導体情報誌アイ 2003年6月号 CONTENTS 6 INFORMATION •大分に最先端システムLSI製造棟を建設 .P2 ■次世代携帯機器向けの 新しい小型SDメモリーカード .P2 ■1メガビットMRAMを開発 .P2