marking PP
Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp
Contextual Info: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1
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Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRAN SISTO R _ 2SJ213 P-CHANNEL MOS FET FOR SW ITCHING The 2S J213, P-channel vertical type MOS FET, is a sw itch ing device PACKAGE DIMENSIONS Unit : mm w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er
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2SJ213
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device
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2SJ213
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device PACKAGE DIMENSIONS Unit : mm which can be driven directly by the o utp ut o f ICs having a 5 V power source.
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diode F4 3J
Abstract: 2SJ213 ta4100 T-943 si D 03 K
Contextual Info: r NEC y — S • 5 s — h* M O S F ie ld E ffe c t T ra n s is to r 2SJ213 MOS FET 2 S J 2 1 3 i P f - ^ / l 4 i ^ M O S FETT", 5 V ^ ï^ IC tfO fÜ ^ J K ^M O S FET (à * £f ci ò, il T 4# •’ m m x >r -y f- > x & H ( ^ - f i i — < , X >f -y f- >
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2sj213diode f4 3jta4100t-943+1si d 03 k
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pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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o-251/-252o-220/-262sc-96sc-95+12ot-23d10702ejav0pf00pa1556ahpa1501hnec pa1501hpa1556apa1550hpa1556pa1522hupa1712pa1560h2sk3326
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2sk4145
Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk4075upa27242sk42122sk4213upa2804t1l2sk4145-s192sk4202upa22112sk3919
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1
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2sk4145
Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P)
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sc-62/sot-89sc-84sc-95/sot-6sc-96+16ot-23ot-23fo-252zo-252zko-252zpo-263zj2sk41452sk40752sk4213upa2591t1h2sk4202upa2804t1lupa2727t1amosfet 2sk4145upa1914te-t12sk4080
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pa1476h
Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674
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x13769xj2v0cd002sa12062sc16742sa988+162sa9922sc18412sc18452sa7332sa9902sc945pa1476hpa80cpa1501hpa1437hpa1478hpa1556apa1428ahpa2981pa571tpa1556ah
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2SK2159
Abstract: 2SK680A 2SJ199 2SJ197 mmtf1n10
Contextual Info: N & P CHANNEL MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 0.5A TO 5A • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V SINGLE N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BST120 BST122 BST80 IRFL014 IRFL110 IRFL2605 IRFL9014 IRLL014 IRLL110
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
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TXAL 228 B
Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X
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/pa17q2pa1710txal 228 b2sab12+8k15892sc2554k2499p015m2sd 16942482sk2134diode zener nt 1243
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1s28351s28361s28371s2838+161ss1231ss2201ss2211ss2221ss2232sa811atriac tic 236scr u 537mp25 transistortransistor su 312ga1l323 pin mini mold transistor2sj19fa114m2sa1611z 103 triac
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MPA2733GR
Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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o-263o-252mpa672tmpa675t+16mpa677tbmpa678tbmpa679tbm8e0710jd18669jj3v0sgd18669jj3v0sg003mpa2733grmpa27332sk4075mosfet 8pinnec power mosfet bare die np2sk4213mpa602t2sj647m2skxxxxnp100p04pdg
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NEC 10F triac
Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2
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g10748ejdv0sg00nec 10f triac10f triac necscr 5p4m+72p4m pin diagramthyristor battery charger 2p4m3s4m scrringing choke converterequivalent scr 2p4m3s4m thyristor2sk1272
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. [検索]ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して, 検索 F を クリックしてください。
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd72002-11upd16305upc1237upc1701upd656562sd13922sb1099upd65625upd78f0841upg508
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2sj165
Abstract: X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159
Contextual Info: ロード・マップ トランジスタ 機能・用途別(シグナルMOS FET) VDSS - ID DC マップ (4 V 駆動タイプ) VDSS(V) 30 ID(DC)(A) 50 0.1 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 0.2 2SK1582 (5.0 Ω / SC-59) 0.5 2SK679A (1.0 Ω / TO-92)
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SC-95
Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
Contextual Info: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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mp-10sc-62/sot-89sc-84sc-95/sot-6+16sc-96ot-23o-252zo-252zko-263zjo-263zksc-952sk3294-zj-e1upa2724np22n055sle-e12sk4075upa27262sk39192sj5982sk3570upa2723t1a
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mc10087f1
Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.
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SC-59
Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
Contextual Info: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A
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2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
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transistor k2541
Abstract: K1398 J411 fet k1482 K1484 K679A k2541 k1272 transistor k1272 K1274
Contextual Info: SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface applications to semi-power switching applications Small-signal MOS FETs have been increasingly employed mainly in portable systems as highperformance switching elements that supersede the existing bipolar transistors.
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