2SD2655 Search Results

Contextual Info: Preliminary Datasheet 2SD2655 R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

Contextual Info: Preliminary Datasheet 2SD2655 R07DS0281EJ0300 Previous: REJ03G0810-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

2SB1691

Abstract: 2SD2655 DSA003640
Contextual Info: 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A Z Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

2SD2655WM-TL-E

Abstract: RENESAS marking code package 2SB1691 2SD2655 SC-59A RENESAS mpak marking code
Contextual Info: 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier REJ03G0810-0200 Previous ADE-208-1388A Rev.2.00 Aug.10.2005 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

Renesas Electronics

Contextual Info: Preliminary Datasheet 2SD2655 R07DS0281EJ0300 Previous: REJ03G0810-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

2SB1691

Abstract: 2SD2655
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SB1691

Abstract: 2SD2655 2SD2655WM-TL-E SC-59A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SB1691

Abstract: 2SD2655 Hitachi DSA0076
Contextual Info: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier ADE-208-1387A Z Rev.1 Jun. 2001 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = –1 A • Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

2SB1691

Abstract: 2SD2655 FT310 2SB169
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SB1691

Abstract: 2SD2655
Contextual Info: 2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 Previous ADE-208-1387A (Z Rev.2.00 Dec.09.2004 Features • • • • • Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

Contextual Info: Preliminary Datasheet 2SB1691 R07DS0272EJ0400 Rev.4.00 Jan 10, 2014 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features • • • • • Small size package: MPAK SC–59A Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

2sb1691wl-tl-e

Contextual Info: Preliminary Datasheet 2SB1691 R07DS0272EJ0300 Previous: REJ03G0482-0200 Rev.3.00 Mar 28, 2011 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier Features •     Small size package: MPAK (SC–59A) Large Maximum current: IC = –1 A Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)