2SD1957 Search Results

2SD1956

Abstract: 2SD1957 ld7a
Contextual Info: V 7. $ /Transistors 2SD1957 2SD1957 NPN v ' ; = i > h -7 > y 'z$ M J M i Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Sir>4Vi.V^i-r K ~7> • W Fi'+ jilll/D im e nsio n s Unit: mm • *8:1: 1) hFE : hFE= 3 0 0 (Typ.)o 2) Vce (sat) 'o V ce (sat)= 0.2V (Typ.)

transistor D304

Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
Contextual Info: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.

Contextual Info: 2SD1957 2SD2061 Transistors Power Transistor 120V, 7A 2SD1957 1) ^Absolute maximum ratings (T a = 2 5 ‘C ) H ig h D C c u rre n t g a in . (1 6 0 ~ -5 0 0 ) 3) S ym bol L im its U n it C o lle c to r-b a s e v o lta q e V cbo 120 V C o lle c to r-e m ltte r v o lta g e

Contextual Info: 40 E ROHM CO L T D h* "7 > V D 7 f l E f l cm • 000 b 02 S 0 $ / T ransistors ESRHM 2SD1957 7 ^ 3 3 -0 9 Z S fD IS S T y ' j 3 > h 7 > V ^ $ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • 41-ï ï i' + ii El/Dimensions Unit: mm • W*

Contextual Info: 2SD1957 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

D304

Abstract: 2SD2061 2SD1957 94L-1016-D304 D301
Contextual Info: Transistors 2SD1957 2SD2061 94L-919–D301 (94L-1016-D304) 315

2SD1957

Contextual Info: 2SD1957 /Transistors HS&fj*7°U-/^NPN yi j 3>h7>y^$ 2SD1957 Freq . Power A m p. • 1 B E h F E V>M V; V sjl tt Triple Diffused Planar N P N S ilico n Transistor Dimensions Unit: mm) : hFE = 300 (Typ.)o 2) V ce (sat) VcE (sat)=0.2V (Typ.) M, A V I 0 05 to

2sd1957

Abstract: if8b 2SD1956 transistor 1B
Contextual Info: Is O " • 2SD1957 > V 7. $ /'Transistors C n i Q *V 7 •w W # NPN y ' j z I > h 7 > y ^ ^ Triple Diffused Planar NPN Silicon Transistor 1B;JÌ!}&1i:fri|Ìi!lffl/Low Freq. Power Amp. # * 1 hFE h F E = 3 0 0 T y p .) ,„»0 3 r (V c E = 5V, lC = 1 A ) Ï

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

Contextual Info: 2SD1956 h "7 > v 7. $ / I ransistors 2SD1956 1 M il£ ? t : f r * ilfllff l/L o w Freq. Power Amp. • v r - y jv :V v ji- 7 - Triple Diffused Planar NPN Silicon Transistor • ^ J K ^ iiE l/D im e n s io n s Unit: mm w * 1) hFE / i S ^ ' : h F E = 300 (Typ.)o

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SD1959

Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

2SD1956

Contextual Info: h ~ 7> y 2SD1956 $/ T r a n s i s t o r s o c n iD ftfi H s t È t f t y i x - ^ N P N v |j 3 > h 7 > v ^ i • v W Triple Diffuseci Planar NPN Silicon Transistor fé à lîJ & ^ ^ J iillIffl/L o w Freq. Power Amp. I w % # \# • ftJ ii'+ iiiE I/D im e n s io n s (Unit: mm

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP

RCM2008R

Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88