transistor kt 908
Abstract: ic 4458 51865 TA-0412 sanyo 555 2SC5276 EN5186 SANYO 414 marking mn
Contextual Info: Ordering number:EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2110A [2SC5276] 1.9 0.95 0.95 0.5 0.4 4 0.16 3 2.5 0 to 0.1 1.5 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).
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en51862sc5276s21e211ghz+7transistor kt 908ic 445851865ta-0412sanyo 555sanyo 414marking mn
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ic 4458
Abstract: 2SC5276 ITR08032 ITR08033 ITR08034 ITR08035 ITR08036 ITR08037 ITR08038 ic1 555
Contextual Info: 注文コード No. N 5 1 8 6 2SC5276 No. N5186 30700 2SC5276 特長 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ S バンド低雑音増幅 , 発振用 ・ 低雑音である:NF=0.9dB typ(f=1GHz) 。 :NF=1.4dB typ(f=1.5GHz)。
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2sc5276n518611ghzs21e2+9ic 4458itr08032itr08033itr08034itr08035itr08036itr08037itr08038ic1 555
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2SC5276
Abstract: ITR08032 ITR08033 ITR08034 ITR08035 ITR08036
Contextual Info: Ordering number:ENN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1.5GHz).
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enn51862sc5276s21e211ghz+5itr08032itr08033itr08034itr08035itr08036
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ic 4458
Abstract: TA-0412 2SC5276 ZS22
Contextual Info: Ordering number:EN5186 2SC5276 No.5186 NPN Epitaxial Planar Silicon Transistor SMÊYO i UHF to S Band Low-Noise Amp, OSC Applications F e a tu re s • Low noise :N F = 0.9dB typ f= 1GHz . : NF=1.4dB typ (f= 1.5GHz). • High gain : I S2le i 2= lld B typ (f= 1.5GHz).
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en51862sc527611ghzic 4458+2ta-0412zs22
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Contextual Info: Ordering number:ENN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1.5GHz).
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enn51862sc5276s21e211ghz |
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2SC5226
Abstract: VHF-UHF Band oscillator 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4853
Contextual Info: Continued frotn previous page A b solute maximum ratings Type No. Package typ» Applications E le ctrica l cha ra cte ristics Ta = 2 5 C fre v cE le cobevcB VCBO (V) VCEO 00 le (mÀ) (mW) (? ) (GHi) fr VCE (V) le (m A) UHF to S-band low-noise amplifier, oscillator
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2sc52772sc44012sc44022sc4403+132sc46732sc48592sc48662sc52292sc37762sc37772sc5226vhf-uhf band oscillator2sc44042sc44052sc44062sc44072sc4853
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2SC4930
Abstract: 2sc5229 2SC4854 2SC4855 2SC4864 2SC4868 2SC4869 2SC4931 2SC5228 2SC5230
Contextual Info: Ordering number : E I 0 0 8 1 Announcement Regarding the Discontinuation of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products have been discontinued. Please check this list carefully and contact your SANYO sales representative if you have any questions.
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2sc48542sc52292sc55412sc4855+102sc5230ec3h01b2sc48642sc5275ec3h06b2sc48682sc49302sc48692sc49312sc5228
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F527S
Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.
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cas-126t0-126lpt0-220cit0-220ml+16sc-67ot-186o-220fisc-67ks0t-189t0-220mflsdwatt220f527s2sc55marking wmm2sc54882sc48532sc49312sc52772sc53742sc54892sc553
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2sc4857
Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Contextual Info: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation
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2sc4853250mm2js21e2sc4857+42sc48722sc4872sc48562sc4859
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2SC5502
Abstract: 2SC550 SSFP package C5226 c5414 2SC4931 2SC5488 2SC5489 C4871 2SC5536
Contextual Info: SAjfiYt NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES fo2 ande I e L u r i n i 0^ m n n ^ I ? V^ vhi B! T i r? |u?ncy £ ra n s is i o r? ,i;a" be used for v a rio u s a p p lic a tio n s such as fo r communication equipment ana m easuring equipm ent. They a re su p e rio r when used w ith low v o ltag e drive,
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packa0/70dds4ti06mt990205tr2sc5502+92sc550ssfp packagec5226c54142sc49312sc54882sc5489c48712sc5536
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transistor 2sC486
Abstract: 2sc486 2SC4870 2SC4872 2sc4856 2SC485
Contextual Info: S NEW P R O D U C T VERY HIGH-FREQUENCY TRANSISTOR 4 P f V o SERIES Na2 Newly d e v e l o p e d SANYO v e r y h i g h - f r e q u e n c y t r a n s i s t o r s c a n be u s e d f o r v a r i o u s a p p l i c a t i o n s s u ch a s f o r c o m m u n ic a t io n e q u ip m e n t
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8833mhz2sk7712scu632sc5226+8sc4863mt950201trtransistor 2sc4862sc4862sc48702sc48722sc48562sc485
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sma3001
Abstract: SGF25
Contextual Info: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''
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spm2001a2sc5534sma30qispm0103a+7spm320220dbmspm3205spm325224dbmsma3001sgf25
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Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p
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2sa13382sa15082sa15732sa1580+62sd10482sd16182sd16192sd16202sd16212sd1622
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