2SC550 Search Results

transistor zo 607

Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).

Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features 15.0±0.5 φ 3.2±0.1 ■ Absolute Maximum Ratings TC = 25°C

transistor marking T78 ghz

Abstract: 2SC5507 2SC5507-T2 power must office 650
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz

2SC5509

Abstract: 2SC5509-T2 2V330
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

N6222

Abstract: 2SC5503
Contextual Info: 注文コード No. N 6 2 2 2 2SC5503 No. N6222 50699 新 2SC5503 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.2dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=15dB typ (f=1GHz)。

Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).

2SC5507-T2

Abstract: transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA

Contextual Info: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications

NEC 1357

Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

Contextual Info: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification

N6221

Abstract: 2SC5501 62212 6221-1 62211 TA-1710
Contextual Info: 注文コード No. N 6 2 2 1 2SC5501 No. N6221 50699 新 2SC5501 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=13dB typ(f=1GHz)。

TA1703

Abstract: ce 2826 ic TA17-03 TA-1703 2SC5504 ce 2826
Contextual Info: 注文コード No. N 6 2 2 3 2SC5504 No. N6223 50699 新 2SC5504 特長 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ S バンド低雑音増幅用 ・低雑音である：NF=0.9dB typ f=1GHz 。 ：NF=1.4dB typ (f=1.5GHz)。

ac 0624 transistor 17-33

Abstract: 6221 ic 2SC5501
Contextual Info: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

transistor marking T79 ghz

Abstract: marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol

sanyo ic lc 7550

Abstract: 0281 002 576 CQ 419 transistor zo 607 zo 607 MA 2SC5503 ZS12 ZS21 cq 0765
Contextual Info: Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 ISAfiYOl VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low ,ow noisi noise : NF=1.2dB typ f=lGHz . High iigh gain : | sz S21i e |2 -= - 15dB i job typ (f=

2SC5503

Abstract: IC163
Contextual Info: Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector

ac 0624 transistor 17-33

Abstract: 2SC5501 TA-1710
Contextual Info: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5501] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector

Contextual Info: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current

2SC5506

Abstract: ib35 TA-1520
Contextual Info: Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).

ce 2826 ic

Abstract: IC 4305 2SC5504 TA1703
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1GHz).

TA-1520

Abstract: 2SC5506
Contextual Info: Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).