2SC4548 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z High Breakdown Voltage z Excellent hFE Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

hxj 2038

Abstract: IC HXJ 2038 2SA17 2SC4548 3188 la 4548 RSN 3306 2SA1740 31883 ic 31883
Contextual Info: Ordering number: EN 3188 _ 2SA1740/2SC4548 PN P E pitaxial P lan ar Silicon T ransistor N PN Triple Diffused P la n ar Silicon T ransistor High-Voltage Driver Applications F e a tu r e s • High breakdow n voltage • Adoption of MBIT process •Excellent hpE lin earlity

2SC4548

Contextual Info: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION „ FEATURES *High breakdown voltage. *Excellent hFE linearity. „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4548 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 200 mA ICM: Collector-base voltage

1650P

Abstract: 2SC4548 TR MJE 350 1500P 4500M
Contextual Info: 2SC4548 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 230.0f NF 1 IKF 17.00m NE 2 NR 1 IKR 45.00m NC 2 IRB 200.0m RE 78.00m XTB 3 XTI 3 VJE 680.0m TF 2.5n VTF 100 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A

2SC4548

Contextual Info: 2SC4548 2SC4548 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 200 mA Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

SMD BR 08

Abstract: 2SC4548
Contextual Info: Transistors SMD Type High-Voltage Driver Applications 2SC4548 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage

Contextual Info: SMD Type Product specification 2SC4548 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage

transistor BA 13

Abstract: BA SOT89
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION 1 „ FEATURES SOT-89 *High breakdown voltage. *Excellent hFE linearity. „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R

2SA1740

Abstract: 2SC4548 ITR04445
Contextual Info: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.

2SC4548E

Abstract: 2SC4548D
Contextual Info: MCC 2SC4548-D 2SC4548-E
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • Small Flat Package Low collector-to-emitter saturation voltage.

2SC4548

Abstract: 2SA1740
Contextual Info: 2SA1740 / 2SC4548 Ordering number : EN3188A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740 / 2SC4548 High-Voltage Driver Applications Features • • • High breakdown votlage.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION  FEATURES *High breakdown voltage. *Excellent hFE linearity.  ORDERING INFORMATION Ordering Number 2SC4548G-x-AB3-R Note: Pin Assignment: B: Base C: Collector

2SC4548

Contextual Info: UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES 1 *High breakdown voltage. *Excellent hFE linearity. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT VCBO VCEO

Contextual Info: 2SC4548 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otherwise Noted) Rating Symbol Value Unit Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage VCEO

Contextual Info: MCC Micro Commercial Components • • • • • • • 2SC4548-D 2SC4548-E
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Features Halogen free available upon request by adding suffix "-HF"

2SC4548

Contextual Info: UTC 2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES 1 *High breakdown voltage. *Excellent hFE linearity. SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT VCBO VCEO

2SC4548

Abstract: 2SA1740 ITR04445 ITR04446
Contextual Info: 2SA1740 / 2SC4548 注文コード No. N 3 1 8 8 A 三洋半導体データシート 半導体ニューズ No.N3188 をさしかえてください。 2SA1740 / 2SC4548 PNP エピタキシァルプレーナ型シリコントランジスタ NPN 三重拡散プレーナ型シリコントランジスタ

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

transistor b985

Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Contextual Info: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3